| Citation: |
CHEN Zhang-yong, CHEN Wei-de, WANG Yong-qian, SONG Shu-fang, XU Zhen-jia, GUO Shao-ling. Correlation Between Er3+ Emission and Microstructure of Erbium-Implanted a-SiOx∶H Film[J]. Journal of Semiconductors, 2002, In Press.
. Correlation Between Er3+ Emission and Microstructure of Erbium-Implanted a-SiOx∶H Film[J]. J. Semicond, 2002, In Press.
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Correlation Between Er3+ Emission and Microstructure of Erbium-Implanted a-SiOx∶H Film
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Abstract
An investigation on the correlation between Er3+ emission and the microstructure of erbium implanted hydrogenated amorphous silicon oxide (a SiOx ∶H) films is presented. FTIR spectra experimental results indicate that the a SiOx ∶H
films are a mixture of two phases, an hydrogenated amorphous SiOx matrix and silicon rich domains embedded therein. The changes in the nonradiative centers in the silicon rich domains have a strong influence on Er3+ emission. -
Keywords:
- Er3+,
- SiOx,
- photoluminescence
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References
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