Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 314-318

PDF

Abstract: 采用射频磁控溅射法在玻璃衬底上制备出高质量的镓掺杂氧化锌(ZnO∶Ga)透明导电膜,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究.制备的ZnO∶Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向.薄膜的最低电阻率达到了3.9×10-4Ω·cm,方块电阻约为4.6Ω/□,薄膜具有良好的附着性,在可见光区的平均透过率达到90%以上.

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2407 Times PDF downloads: 1750 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      射频磁控溅射制备ZnO∶Ga透明导电膜及特性[J]. Journal of Semiconductors, 2005, In Press. 射频磁控溅射制备ZnO∶Ga透明导电膜及特性[J]. Chin. J. Semicond., 2005, 26(2): 314.Export: BibTex EndNote
      Citation:
      射频磁控溅射制备ZnO∶Ga透明导电膜及特性[J]. Journal of Semiconductors, 2005, In Press.

      射频磁控溅射制备ZnO∶Ga透明导电膜及特性[J]. Chin. J. Semicond., 2005, 26(2): 314.
      Export: BibTex EndNote

      射频磁控溅射制备ZnO∶Ga透明导电膜及特性

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return