| Citation: |
Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, Fang Wenqing, Jiang Fengyi. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Journal of Semiconductors, 2006, In Press.
Su H B, Dai J N, Pu Y, Wang L, Li F, Fang W Q, Jiang F Y. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Chin. J. Semicond., 2006, 27(7): 1221.
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Effect of Growth Temperature on Properties of ZnO Thin Films
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Abstract
High quality ZnO thin films are grown on Al2O3 (0001) substrates by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD).Effects of growth temperature on the structure,optical characteristics of ZnO thin films are investigated by double crystal X-ray diffraction (ω and θ-2θ scans) and room temperature photoluminescence(PL) spectra.With the rise of the growth temperature,the c-axis lattice constant of the ZnO films increases while the bandgap becomes wider. -
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