Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters

Wei Guo; Zhao Han; Xiaolong Zhao; Guangwei Xu; Shibing Long

doi:10.1088/1674-4926/44/7/072805

J. Semicond. > 2023, Volume 44 > Issue 7 > 072805, doi: 10.1088/1674-4926/44/7/072805

ARTICLES

Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters

Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu and Shibing Long

+ Author Affiliations

Corresponding author: Guangwei Xu, xugw@ustc.edu.cn; Shibing Long, shibinglong@ustc.edu.cn

Abstract: We demonstrate superb large-area vertical β-Ga₂O₃ SBDs with a Schottky contact area of 1 × 1 mm² and obtain a high-efficiency DC–DC converter based on the device. The β-Ga₂O₃ SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (V_F) and the on-resistance (R_on) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga₂O₃ SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga₂O₃ SBDs and relevant circuits in power electronic applications.

Key words: β-Ga₂O₃, SBD, DC–DC converter

References

[1]	Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
[2]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β–Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[3]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[4]	Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga₂O₃materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[5]	Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga₂O₃ for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124, 220901 doi: 10.1063/1.5062841
[6]	Ren F, Yang J C, Fares C, et al. Device processing and junction formation needs for ultra-high power Ga₂O₃ electronics. MRS Commun, 2019, 9, 77 doi: 10.1557/mrc.2019.4
[7]	Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga₂O₃ field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110, 103506 doi: 10.1063/1.4977857
[8]	Zhou H, Yan Q L, Zhang J C, et al. High-performance vertical β-Ga₂O₃ Schottky barrier diode with implanted edge termination. IEEE Electron Device Lett, 2019, 40, 1788 doi: 10.1109/LED.2019.2939788
[9]	Ji M, Taylor N R, Kravchenko I, et al. Demonstration of large-size vertical Ga₂O₃ Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36, 41 doi: 10.1109/TPEL.2020.3001530
[10]	Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/ R_{on, sp} of up to 0.95 GW/cm². IEEE Electron Device Lett, 2020, 41, 107 doi: 10.1109/LED.2019.2953559
[11]	He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm² vertical Ga₂O₃ Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43, 264 doi: 10.1109/LED.2021.3133866
[12]	Yang J C, Ren F, Chen Y T, et al. Dynamic switching characteristics of 1 A forward current β-Ga₂O₃ rectifiers. IEEE J Electron Devices Soc, 2018, 7, 57 doi: 10.1109/JEDS.2018.2877495
[13]	Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm² or a 5A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36, 6179 doi: 10.1109/TPEL.2020.3036442
[14]	Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7 × 1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio. Appl Phys Exp, 2022, 15, 016501 doi: 10.35848/1882-0786/ac4080
[15]	Hao W B, Wu F H, Li W S, et al. High-performance vertical β- Ga₂O₃ Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2023, 9.5.1 doi: 10.1109/IEDM45625.2022.10019468
[16]	Guo W, Jian G Z, Hao W B, et al. β-Ga₂O₃ field plate Schottky barrier diode with superb reverse recovery for high-efficiency DC–DC converter. IEEE J Electron Devices Soc, 2022, 10, 933 doi: 10.1109/JEDS.2022.3212368
[17]	Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga₂O₃ Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36, 10976 doi: 10.1109/TPEL.2021.3069918
[18]	Yang J C, Fares C, Elhassani R, et al. Reverse breakdown in large area, field-plated, vertical β-Ga₂O₃ rectifiers. ECS J Solid State Sci Technol, 2019, 8, Q3159 doi: 10.1149/2.0211907jss
[19]	Sharma R, Xian M H, Fares C, et al. Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers. J Vac Sci Technol A, 2021, 39, 013406 doi: 10.1116/6.0000815

Fig. 1. (Color online) (a) Schematic cross section of the β-Ga₂O₃ SBD. (b) Optical image.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Forward conduction characteristics and (b) reverse breakdown characteristics of the 1×1 mm².

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) R_{on, sp} versus V_br benchmarks of reported state-of-the-art large-area β-Ga₂O₃ SBDs with electrode areas above 0.2 mm².

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) The reverse recovery characteristics of the Si FRD, SiC SBD and β-Ga₂O₃ SBD.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Schematic of the DC-DC converter based on the β-Ga₂O₃ SBD.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Photograph of the β-Ga₂O₃ SBD-based DC-DC converter and the testing platform.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Experimental waveforms of the V_GS, V_OUT and I_L in the β-Ga₂O₃ SBD-based DC-DC converter.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) Experimental waveforms of the V_GS, V_D and I_D in the β-Ga₂O₃ SBD-based DC-DC converter.

DownLoad: Full-Size Img PowerPoint

Table 1. Properties of the β-Ga₂O₃ with commercial Si and SiC devices.

Parameters	Si FRD	SiC SBD	β-Ga₂O₃ SBD
R_on (Ω)	0.17	0.38	0.46
V_br (V)	663	776	612
I_rr (A)	3.61	1.54	1.9
t_rr (ns)	16.9	6.8	7.4
Q_rr (nC)	38.34	6.50	8.69

DownLoad: CSV

Table 2. Specifications of the DC-DC converter.

Parameters	Values	Parameters	Values
GaN FET	650 V/180 mΩ	L (mH)	1
V_IN (V)	200	f (kHz)	100
C_{IN@315 V} (μF)	100	D	40%
C_{OUT@500 V} (μF)	6.8	R (kΩ)	1

DownLoad: CSV

Table 3. Experimental results of the DC-DC converter.

Parameters	Values	Parameters	Values
V_IN (V)	200	P_IN (W)	115.28
V_AUX (V)	9	P_OUT (W)	110.45
V_OUT (V)	329.7	Efficiency	95.81%

DownLoad: CSV

[1]	Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
[2]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β–Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[3]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[4]	Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga₂O₃materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[5]	Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga₂O₃ for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124, 220901 doi: 10.1063/1.5062841
[6]	Ren F, Yang J C, Fares C, et al. Device processing and junction formation needs for ultra-high power Ga₂O₃ electronics. MRS Commun, 2019, 9, 77 doi: 10.1557/mrc.2019.4
[7]	Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga₂O₃ field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110, 103506 doi: 10.1063/1.4977857
[8]	Zhou H, Yan Q L, Zhang J C, et al. High-performance vertical β-Ga₂O₃ Schottky barrier diode with implanted edge termination. IEEE Electron Device Lett, 2019, 40, 1788 doi: 10.1109/LED.2019.2939788
[9]	Ji M, Taylor N R, Kravchenko I, et al. Demonstration of large-size vertical Ga₂O₃ Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36, 41 doi: 10.1109/TPEL.2020.3001530
[10]	Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/ R_{on, sp} of up to 0.95 GW/cm². IEEE Electron Device Lett, 2020, 41, 107 doi: 10.1109/LED.2019.2953559
[11]	He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm² vertical Ga₂O₃ Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43, 264 doi: 10.1109/LED.2021.3133866
[12]	Yang J C, Ren F, Chen Y T, et al. Dynamic switching characteristics of 1 A forward current β-Ga₂O₃ rectifiers. IEEE J Electron Devices Soc, 2018, 7, 57 doi: 10.1109/JEDS.2018.2877495
[13]	Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm² or a 5A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36, 6179 doi: 10.1109/TPEL.2020.3036442
[14]	Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7 × 1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio. Appl Phys Exp, 2022, 15, 016501 doi: 10.35848/1882-0786/ac4080
[15]	Hao W B, Wu F H, Li W S, et al. High-performance vertical β- Ga₂O₃ Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2023, 9.5.1 doi: 10.1109/IEDM45625.2022.10019468
[16]	Guo W, Jian G Z, Hao W B, et al. β-Ga₂O₃ field plate Schottky barrier diode with superb reverse recovery for high-efficiency DC–DC converter. IEEE J Electron Devices Soc, 2022, 10, 933 doi: 10.1109/JEDS.2022.3212368
[17]	Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga₂O₃ Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36, 10976 doi: 10.1109/TPEL.2021.3069918
[18]	Yang J C, Fares C, Elhassani R, et al. Reverse breakdown in large area, field-plated, vertical β-Ga₂O₃ rectifiers. ECS J Solid State Sci Technol, 2019, 8, Q3159 doi: 10.1149/2.0211907jss
[19]	Sharma R, Xian M H, Fares C, et al. Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers. J Vac Sci Technol A, 2021, 39, 013406 doi: 10.1116/6.0000815

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Received: 30 December 2022 Revised: 15 February 2023 Online: Accepted Manuscript: 09 May 2023Uncorrected proof: 05 June 2023Published: 10 July 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(7): 072805

Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805 W Guo, Z Han, X L Zhao, G W Xu, S B Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. J. Semicond, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805Export: BibTex EndNote

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Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805

W Guo, Z Han, X L Zhao, G W Xu, S B Long. Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters[J]. J. Semicond, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805

Export: BibTex EndNote

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Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters

doi: 10.1088/1674-4926/44/7/072805

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

More Information

Author Bio:
Wei Guo got his BS degree from Xi’an Technological University in 2016. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on DC–DC converters based on Ga₂O₃ devices

Zhao Han got his BS degree from Anhui University in 2020. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on Ga₂O₃ Schottky barrier diodes

Guangwei Xu received his PhD degree at IMECAS in 2017. Then, he joined the University of California, Los Angeles as a postdoc. He joined the University of Science and Technology of China as an associate research fellow in Shibing Long’s Group in 2019. His research focuses on wide bandgap semiconductor power device fabrication, device defect measurement and modeling

Shibing Long is a full professor at the School of Microelectronics, University of Science and Technology of China. He received his PhD degree at IMECAS in 2005. In 2011, he was a visiting scholar at Universitat Autònoma de Barcelona for a year. Then, he joined the University of Science and Technology of China in 2018. His research focuses on ultra-wide bandgap semiconductor devices, micro and nano fabrication and memories. He has published more than 100 papers in international academic journals and conferences such as IEEE EDL, IEEE ISPSD and IEEE IEDM, SCI has cited more than 4000 times
Corresponding author: xugw@ustc.edu.cn; shibinglong@ustc.edu.cn
Received Date: 2022-12-30
Revised Date: 2023-02-15

Available Online: 2023-05-09

Abstract

Abstract

We demonstrate superb large-area vertical β-Ga₂O₃ SBDs with a Schottky contact area of 1 × 1 mm² and obtain a high-efficiency DC–DC converter based on the device. The β-Ga₂O₃ SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (V_F) and the on-resistance (R_on) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga₂O₃ SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga₂O₃ SBDs and relevant circuits in power electronic applications.
- β-Ga₂O₃,
- SBD,
- DC–DC converter

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References(19)

References

[1]	Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
[2]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β–Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[3]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[4]	Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga₂O₃materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[5]	Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga₂O₃ for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124, 220901 doi: 10.1063/1.5062841
[6]	Ren F, Yang J C, Fares C, et al. Device processing and junction formation needs for ultra-high power Ga₂O₃ electronics. MRS Commun, 2019, 9, 77 doi: 10.1557/mrc.2019.4
[7]	Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga₂O₃ field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110, 103506 doi: 10.1063/1.4977857
[8]	Zhou H, Yan Q L, Zhang J C, et al. High-performance vertical β-Ga₂O₃ Schottky barrier diode with implanted edge termination. IEEE Electron Device Lett, 2019, 40, 1788 doi: 10.1109/LED.2019.2939788
[9]	Ji M, Taylor N R, Kravchenko I, et al. Demonstration of large-size vertical Ga₂O₃ Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36, 41 doi: 10.1109/TPEL.2020.3001530
[10]	Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/ R_{on, sp} of up to 0.95 GW/cm². IEEE Electron Device Lett, 2020, 41, 107 doi: 10.1109/LED.2019.2953559
[11]	He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm² vertical Ga₂O₃ Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43, 264 doi: 10.1109/LED.2021.3133866
[12]	Yang J C, Ren F, Chen Y T, et al. Dynamic switching characteristics of 1 A forward current β-Ga₂O₃ rectifiers. IEEE J Electron Devices Soc, 2018, 7, 57 doi: 10.1109/JEDS.2018.2877495
[13]	Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm² or a 5A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36, 6179 doi: 10.1109/TPEL.2020.3036442
[14]	Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7 × 1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio. Appl Phys Exp, 2022, 15, 016501 doi: 10.35848/1882-0786/ac4080
[15]	Hao W B, Wu F H, Li W S, et al. High-performance vertical β- Ga₂O₃ Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2023, 9.5.1 doi: 10.1109/IEDM45625.2022.10019468
[16]	Guo W, Jian G Z, Hao W B, et al. β-Ga₂O₃ field plate Schottky barrier diode with superb reverse recovery for high-efficiency DC–DC converter. IEEE J Electron Devices Soc, 2022, 10, 933 doi: 10.1109/JEDS.2022.3212368
[17]	Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga₂O₃ Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36, 10976 doi: 10.1109/TPEL.2021.3069918
[18]	Yang J C, Fares C, Elhassani R, et al. Reverse breakdown in large area, field-plated, vertical β-Ga₂O₃ rectifiers. ECS J Solid State Sci Technol, 2019, 8, Q3159 doi: 10.1149/2.0211907jss
[19]	Sharma R, Xian M H, Fares C, et al. Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers. J Vac Sci Technol A, 2021, 39, 013406 doi: 10.1116/6.0000815

Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters

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Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters

Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters