| Citation: |
Zeng Qingming, Li Xianjie, Zhou Zhou, Wang Yong, Wang Xiaoliang. Investigation of Undoped AlGaN/GaN Microwave Power HEMT[J]. Journal of Semiconductors, 2005, In Press.
Zeng Q M, Li X J, Zhou Z, Wang Y, Wang X L. Investigation of Undoped AlGaN/GaN Microwave Power HEMT[J]. Chin. J. Semicond., 2005, 26(13): 151.
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Investigation of Undoped AlGaN/GaN Microwave Power HEMT
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Abstract
The structure,process, and performance of undoped AlGaN/GaN microwave power high electronic mobility transistors (HEMTs) are presented.Devices with the gate length and width of 0.6μm and 100～1000μm are developed.For those with the gate width of 100,300, and 500μm, the typical maximum transconductance is in the range of 190～170mS/mm; the cutoff frequency is about 24GHz; the maximum oscillation frequency is 55,46, and 40GHz,respectively.The continuous microwave power performance in different bias condition for the sample with 1000μm gate width is measured.When Vds=17V, Id=310mA, and Pin=25.19dBm, Po=30dBm (1W) ,Ga=4.81dB; When Vds=18V, Id=290mA and Pin=27dBm, Po=31.35dBm (1.37W) , Ga=435dB. -
References
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