Chin. J. Semicond. > 2002, Volume 23 > Issue 9 > 957-961

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Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm

SHI Rui-ying, LIU Xun-chun, QIAN Yong-xue and SHI Hua-fen

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Abstract:

An improved global optimum genetic algorithm are described, reproduction, crossover and mutation operators are automatically optimized in the algorithm. The time searching the best of all reproduction, crossover and mutation operators is saved and the speed of parameter extraction is quickened. All 16 parameters of the Ga0.49In0.51P/GaAs hetero junction bipolar transistor (HBT) small signal equivalent circuit model are extracted from S parameters in the range of 1~26.5 GHz. Excellent agreement between the modeled and measured device performance is achieved in a wide range of operating conditions.

Key words: an improved genetic algorithmsmall signal equivalent circuit modelparameter extraction

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    Received: 26 December 2001 Revised: Online: Published: 01 September 2002

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      SHI Rui-ying, LIU Xun-chun, QIAN Yong-xue, SHI Hua-fen. Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm[J]. Journal of Semiconductors, 2002, In Press. . Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm[J]. J. Semicond, 2002, In Press. Export: BibTex EndNote
      Citation:
      SHI Rui-ying, LIU Xun-chun, QIAN Yong-xue, SHI Hua-fen.

      Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm

      [J]. Journal of Semiconductors, 2002, In Press.

      .

      Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm

      [J]. J. Semicond, 2002, In Press.
      Export: BibTex EndNote

      Ga0.49In0.51P/GaAs HBT Small-Signal Model Extraction Using a Improved Genetic Algorithm

      • Received Date: 2001-12-26
        Available Online: 2023-03-15
      • Published Date: 2002-09-01

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