J. Semicond. > 2023, Volume 44 > Issue 7 > 072802, doi: 10.1088/1674-4926/44/7/072802
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2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Tingting Han§, Yuangang Wang§, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu and Zhihong Feng

+ Author Affiliations

 Corresponding author: Yuanjie Lv, yuanjielv@163.com; Zhihong Feng, ga917vv@163.com

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Abstract: This work demonstrates high-performance NiO/β-Ga2O3 vertical heterojunction diodes (HJDs) with double-layer junction termination extension (DL-JTE) consisting of two p-typed NiO layers with varied lengths. The bottom 60-nm p-NiO layer fully covers the β-Ga2O3 wafer, while the geometry of the upper 60-nm p-NiO layer is 10 μm larger than the square anode electrode. Compared with a single-layer JTE, the electric field concentration is inhibited by double-layer JTE structure effectively, resulting in the breakdown voltage being improved from 2020 to 2830 V. Moreover, double p-typed NiO layers allow more holes into the Ga2O3 drift layer to reduce drift resistance. The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm2. The device with DL-JTE shows a power figure-of-merit (PFOM) of 5.98 GW/cm2, which is 2.8 times larger than that of the conventional single-layer JTE structure. These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga2O3 HJDs.

Key words: β-Ga2O3, breakdown voltage, heterojunction diode (HJD), junction termination extension (JTE), power figure-of-merit (PFOM)



[1]
Zhang H Z, Wang L J, Xia C T, et al. Research progress of wide-gap semiconductor β-Ga2O3 single crystal. J Synth Cryst, 2015, 44, 2943 doi: 10.1109/TPEL.2019.2946367
[2]
Hu Z Z, Lv Y J, Zhao C Y, et al. Beveled fluoride plasma treatment for vertica β-Ga2O3 Schottky barrier diode with high reverse blocking voltage and low turn-on voltage. IEEE Electron Device Lett, 2020, 41(3), 441 doi: 10.1109/LED.2020.2968587
[3]
Xiong W H, Zhou X Z, Xu G W, et al. Double-barrier β-Ga2O3 Schottky barrier diode with low turn-on voltage and leakage current. IEEE Electron Device Lett, 2021, 42(3), 430 doi: 10.1109/LED.2021.3055349
[4]
Saurav R, Arkka B, Praneeth R, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 2021, 42(8), 1140 doi: 10.1109/LED.2021.3089945
[5]
He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43(2), 264 doi: 10.1109/LED.2021.3133866
[6]
Li W S, Kazuki N, Hu Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41(1), 107 doi: 10.1109/LED.2019.2953559
[7]
Tetzner K, Treidel E B, Hilt O, et al. Lateral 1.8 KV β-Ga2O3 MOSFET with 155 MW/cm2 power figure of merit. IEEE Electron Device Lett, 2019, 40(9), 1503 doi: 10.1109/LED.2019.2930189
[8]
Lv Y J, Liu H Y, Zhou X Y, et al. Lateral β-Ga2O3 MOSFETs with high power figure of merit of 277 MW/cm2. IEEE Electron Device Lett, 2020, 41(4), 537 doi: 10.1109/LED.2020.2974515
[9]
Hu Z Y, Nomoto K, Li W S, et al. Enhancement-mode Ga2O3 vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 2018, 39(6), 869 doi: 10.1109/LED.2018.2830184
[10]
Sharma S, Zeng K, Saha S, et al. Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage. IEEE Electron Device Lett, 2020, 41(6), 836 doi: 10.1109/LED.2020.2991146
[11]
Zheng Z Y, Qiao B S, Zhang Z Z, et al. High detectivity of metal–semiconductor–metal Ga2O3 solar-blind photodetector through thickness-regulated gain. IEEE Trans Electron Devices, 2022, 69(8), 4362 doi: 10.1109/TED.2022.3184277
[12]
Qiao B S, Zhang Z Z, Xie X H, et al. Quenching of persistent photocurrent in an oxide UV photodetector. J Mater Chem C, 2021, 9, 4039 doi: 10.1039/D0TC05997H
[13]
Yoshihiro K, Shohei K, Shinji N. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 2016, 9(9), 091101 doi: 10.7567/APEX.9.091101
[14]
Gong H H, Chen X H, Xu Y, et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode. Appl Phys Lett, 2020, 117, 022104 doi: 10.1063/5.0010052
[15]
Lu X, Zhou X D, Jiang H X, et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 2020, 41(3), 449 doi: 10.1109/LED.2020.2967418
[16]
Gong H H, Zhou F, Xu W Z, et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Eletron, 2021, 36(11), 12213 doi: 10.1109/TPEL.2021.3082640
[17]
Gong H H, Wang Z P, Yu X X, et al. Field-plated NiO/Ga2O3 p-n heterojunction power diodes with high-temperature thermal stability and near unity ideality factors. Electron Device Soc, 2021, 9, 1166 doi: 10.1109/JEDS.2021.3130305
[18]
Zhou F, Gong H H, Xu W Z, et al. 1.95-kV Beveled-mesa NiO/β-Ga2O3 heterojunction diode with 98.5% conversion efficiency and over million-times overvoltage ruggedness. IEEE Trans Power Eletronics, 2022, 37(2), 1223 doi: 10.1109/TPEL.2021.3108780
[19]
Hu Z Z, Li J G, Zhao C Y, et al. Design and fabrication of vertical metal/TiO2/β-Ga2O3 dielectric heterojunction diode with reverse blocking voltage of 1010 V. IEEE Trans Electron Devices, 2020, 67(12), 5628 doi: 10.1109/TED.2020.3033787
[20]
Wang Y G, Gong H H, Lv Y J, et al. 2.41 kV vertical p-NiO/n-Ga2O3 heterojunction diodes with a record Baliga’s figure-of-merit of 5.18 GW/cm2. IEEE Trans Power Eletronics, 2022, 37(4), 3743 doi: 10.1109/TPEL.2021.3123940
[21]
Zhang J C, Dong P F, Dang K, et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 2022, 13, 3900 doi: 10.1038/s41467-022-31664-y
[22]
Yan Q L, Gong H H, Zhang J C, et al. β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2. Appl Phys Lett, 2021, 118, 122102 doi: 10.1063/5.0044130
[23]
Gong H H, Yu X X, Xu Y, et al. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 2021, 118, 202102 doi: 10.1063/5.0050919
[24]
Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Eletronics, 2021, 36(6), 6179 doi: 10.1109/TPEL.2020.3036442
Fig. 1.  (Color online) Cross-sectional schematic of the devices with DL-JTE/ JTE.

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Fig. 2.  (Color online) C–V and 1/C2–V characteristics of the Ga2O3 SBD without termination.

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Fig. 3.  (Color online) Forward I–V curves and Ron,sp of devices with DL-JTE/ JTE.

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Fig. 4.  (Color online) Breakdown characteristics of devices with DL-JTE/ JTE.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Simulated distributions of the electric field for the fabricated HJD with (a) JTE, (b) DL-JTE at bias of –2020 V, (c) DL-JTE at bias of –2830 V, and (d–f) the corresponding distribution of electric field versus position.

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Fig. 6.  (Color online) Vbr versus Ron,sp of β-Ga2O3-based diodes reported against our NiO/β-Ga2O3 HJD with DL-JTE.

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[1]
Zhang H Z, Wang L J, Xia C T, et al. Research progress of wide-gap semiconductor β-Ga2O3 single crystal. J Synth Cryst, 2015, 44, 2943 doi: 10.1109/TPEL.2019.2946367
[2]
Hu Z Z, Lv Y J, Zhao C Y, et al. Beveled fluoride plasma treatment for vertica β-Ga2O3 Schottky barrier diode with high reverse blocking voltage and low turn-on voltage. IEEE Electron Device Lett, 2020, 41(3), 441 doi: 10.1109/LED.2020.2968587
[3]
Xiong W H, Zhou X Z, Xu G W, et al. Double-barrier β-Ga2O3 Schottky barrier diode with low turn-on voltage and leakage current. IEEE Electron Device Lett, 2021, 42(3), 430 doi: 10.1109/LED.2021.3055349
[4]
Saurav R, Arkka B, Praneeth R, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 2021, 42(8), 1140 doi: 10.1109/LED.2021.3089945
[5]
He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43(2), 264 doi: 10.1109/LED.2021.3133866
[6]
Li W S, Kazuki N, Hu Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41(1), 107 doi: 10.1109/LED.2019.2953559
[7]
Tetzner K, Treidel E B, Hilt O, et al. Lateral 1.8 KV β-Ga2O3 MOSFET with 155 MW/cm2 power figure of merit. IEEE Electron Device Lett, 2019, 40(9), 1503 doi: 10.1109/LED.2019.2930189
[8]
Lv Y J, Liu H Y, Zhou X Y, et al. Lateral β-Ga2O3 MOSFETs with high power figure of merit of 277 MW/cm2. IEEE Electron Device Lett, 2020, 41(4), 537 doi: 10.1109/LED.2020.2974515
[9]
Hu Z Y, Nomoto K, Li W S, et al. Enhancement-mode Ga2O3 vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 2018, 39(6), 869 doi: 10.1109/LED.2018.2830184
[10]
Sharma S, Zeng K, Saha S, et al. Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage. IEEE Electron Device Lett, 2020, 41(6), 836 doi: 10.1109/LED.2020.2991146
[11]
Zheng Z Y, Qiao B S, Zhang Z Z, et al. High detectivity of metal–semiconductor–metal Ga2O3 solar-blind photodetector through thickness-regulated gain. IEEE Trans Electron Devices, 2022, 69(8), 4362 doi: 10.1109/TED.2022.3184277
[12]
Qiao B S, Zhang Z Z, Xie X H, et al. Quenching of persistent photocurrent in an oxide UV photodetector. J Mater Chem C, 2021, 9, 4039 doi: 10.1039/D0TC05997H
[13]
Yoshihiro K, Shohei K, Shinji N. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 2016, 9(9), 091101 doi: 10.7567/APEX.9.091101
[14]
Gong H H, Chen X H, Xu Y, et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode. Appl Phys Lett, 2020, 117, 022104 doi: 10.1063/5.0010052
[15]
Lu X, Zhou X D, Jiang H X, et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 2020, 41(3), 449 doi: 10.1109/LED.2020.2967418
[16]
Gong H H, Zhou F, Xu W Z, et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Eletron, 2021, 36(11), 12213 doi: 10.1109/TPEL.2021.3082640
[17]
Gong H H, Wang Z P, Yu X X, et al. Field-plated NiO/Ga2O3 p-n heterojunction power diodes with high-temperature thermal stability and near unity ideality factors. Electron Device Soc, 2021, 9, 1166 doi: 10.1109/JEDS.2021.3130305
[18]
Zhou F, Gong H H, Xu W Z, et al. 1.95-kV Beveled-mesa NiO/β-Ga2O3 heterojunction diode with 98.5% conversion efficiency and over million-times overvoltage ruggedness. IEEE Trans Power Eletronics, 2022, 37(2), 1223 doi: 10.1109/TPEL.2021.3108780
[19]
Hu Z Z, Li J G, Zhao C Y, et al. Design and fabrication of vertical metal/TiO2/β-Ga2O3 dielectric heterojunction diode with reverse blocking voltage of 1010 V. IEEE Trans Electron Devices, 2020, 67(12), 5628 doi: 10.1109/TED.2020.3033787
[20]
Wang Y G, Gong H H, Lv Y J, et al. 2.41 kV vertical p-NiO/n-Ga2O3 heterojunction diodes with a record Baliga’s figure-of-merit of 5.18 GW/cm2. IEEE Trans Power Eletronics, 2022, 37(4), 3743 doi: 10.1109/TPEL.2021.3123940
[21]
Zhang J C, Dong P F, Dang K, et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 2022, 13, 3900 doi: 10.1038/s41467-022-31664-y
[22]
Yan Q L, Gong H H, Zhang J C, et al. β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2. Appl Phys Lett, 2021, 118, 122102 doi: 10.1063/5.0044130
[23]
Gong H H, Yu X X, Xu Y, et al. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 2021, 118, 202102 doi: 10.1063/5.0050919
[24]
Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Eletronics, 2021, 36(6), 6179 doi: 10.1109/TPEL.2020.3036442

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    Received: 08 December 2022 Revised: 18 January 2023 Online: Accepted Manuscript: 18 February 2023Uncorrected proof: 20 February 2023Corrected proof: 12 June 2023Published: 10 July 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(7): 072802
      Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802. doi: 10.1088/1674-4926/44/7/072802 T T Han, Y G Wang, Y J Lv, S B Dun, H Y Liu, A M Bu, Z H Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. J. Semicond, 2023, 44(7): 072802. doi: 10.1088/1674-4926/44/7/072802Export: BibTex EndNote
      Citation:
      Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802. doi: 10.1088/1674-4926/44/7/072802

      T T Han, Y G Wang, Y J Lv, S B Dun, H Y Liu, A M Bu, Z H Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. J. Semicond, 2023, 44(7): 072802. doi: 10.1088/1674-4926/44/7/072802
      Export: BibTex EndNote
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      2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

      doi: 10.1088/1674-4926/44/7/072802

      • National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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      • Author Bio:

        Tingting Han was born in Hengshui, Hebei Province in 1986, senior engineer with a master's degree in microelectronics and solid state electronics. She graduated from Shandong University in 2011, mainly works in the research of gallium oxide devices

        Yuanjie Lv was born in Tai'an City, Shandong Province in 1985, professor. He got doctor’s degree in microelectronics and solid-state electronics from Shandong University in 2012. He mainly works in the research of wide-gap semiconductor electronic devices

      • Corresponding author: yuanjielv@163.com; ga917vv@163.com
      • Received Date: 2022-12-08
      • Revised Date: 2023-01-18
        • Available Online: 2023-02-18

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