J. Semicond. > 2016, Volume 37 > Issue 7 > 074006
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SEMICONDUCTOR DEVICES

An improved temperature-dependent large signal model of microwave GaN HEMTs

Changsi Wang, Yuehang Xu, Zhang Wen, Zhikai Chen and Ruimin Xu

+ Author Affiliations

 Corresponding author: Xu Yuehang,yuehangxu@uestc.edu.cn

DOI: 10.1088/1674-4926/37/7/074006

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Abstract: Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of -55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.

Key words: GaN HEMTs, large signal model, thermal resistance



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Angelov I, Roberto T. Innovations in EDA:Accurate modeling of GaAs & GaN HEMT's for nonlinear applications. Agilent technologies, San Francisco, CA, USA, (2013, May).[Online]. Available:http://www.keysight.com/main/eventDetail.jspx?cc=CN&lc=chi&ckey=2271844&nid=-33281.536883196&id=2271844.
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.  (Color online) (a) Photography of the device, (b) schematic structure, and (c) topology of the large signal model of AlGaN/GaN HEMTs.

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.  Modeling flowchart for the large signal model of AlGaN/GaN HEMTs.

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.  (a) Measured (circles) and modeled (lines) Rd and Rs versus Ta range from 55 to 125 ℃ , (b) comparison of S parameters for Vgsq = 0 V, Vdsq = 1 V, Ta = 125 ℃ (circles: measurements, lines: with thermal Rd (T) and Rs (T), dashes: with Rd and Rs).

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.  Measured (circles) and modeled (lines) pulsed-IV characteristics at T0, Vgsq = 0 V for Vgs = 4 to 0 V, 0.2 V steps and Vdsq = 0 V for Vds = 0 to 35 V, 1 V step.

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.  FEM thermal simulations and channel temperature predictions. (a) Simulated (symbols) and fitted (lines) $R_{\mathrm{th}}$ as a function of $P_{\mathrm{diss}}$ and $T_{\mathrm{a}}$ , inset for the comparison of $R_{\mathrm{th}}$ between our simulations and that in Reference [14], (b) comparison of the channel temperature variations predicted by linear and nonlinear $R_{\mathrm{th}}$ for $P_{\mathrm{diss}}=$ 0.9 and $P_{\mathrm{diss}}=$ 1.2 W under different $T_{\mathrm{a}}$ , and (c) transient thermal simulations and fitting results at $T_0$ for $P_{\mathrm{diss}} = 0.5$ , 1.0 and 2.0~W.

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.  Measured (circles) and simulated (solid lines for $T_{\mathrm{a}} = 25$ ~℃, and dot lines for $T_{\mathrm{a}} = 125$ ~℃) $C_{\mathrm{gs}}$ and $C_{\mathrm{gd}}$ characteristics.

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.  Comparison between measurements and simulations of the $S$ parameters terminated with 50 $\Omega$ for $V_{\mathrm{gsq}} = -2.5$ V, $V_{\mathrm{dsq}} = 28$ V, $T_{\mathrm{a}} = 25$ , 75 and 125 $℃$ (circles: measurements, lines: with nonlinear thermal sub-circuit, dashes: with linear thermal sub-circuit). (a) $S_{\mathrm{11}}$ and $S_{\mathrm{22}}$ . (b) $S_{\mathrm{21}}$ .

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.  Measured (circles) and simulated dc drain current versus RF input power at $V_{\mathrm{gsq}}= -2.8$ V, $V_{\mathrm{dsq}} = 28$ V (lines: with proposed nonlinear thermal sub-circuit, crosses: with linear thermal sub-circuits). (a) Ambient temperature $T_{\mathrm{a}}= -55$ $℃$ . (b) $T_{\mathrm{a}}= 25$ $℃$ . (c) $T_{\mathrm{a}}= 75$ ~ $℃$ . (d) $T_{\mathrm{a}}= 125$ $℃$ .

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.  Comparison between measurements and simulations of the output characteristics at 3 GHz for $V_{\mathrm{gsq}} = -2.8$ V, $V_{\mathrm{dsq}} = 28$ V (circles: measurements, lines: with nonlinear thermal sub-circuit, crosses: with linear thermal sub-circuit). (a) Ambient temperature $T_{\mathrm{a}} = -55$ ℃. (b) $T_{\mathrm{a}} = 25$ ℃. (c) $T_{\mathrm{a}} = 75$ ℃. (d) $T_{\mathrm{a}} = 125$ ℃.

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Angelov I, Roberto T. Innovations in EDA:Accurate modeling of GaAs & GaN HEMT's for nonlinear applications. Agilent technologies, San Francisco, CA, USA, (2013, May).[Online]. Available:http://www.keysight.com/main/eventDetail.jspx?cc=CN&lc=chi&ckey=2271844&nid=-33281.536883196&id=2271844.
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    Received: 14 November 2015 Revised: Online: Published: 01 July 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(7): 074006
      Changsi Wang, Yuehang Xu, Zhang Wen, Zhikai Chen, Ruimin Xu. An improved temperature-dependent large signal model of microwave GaN HEMTs[J]. Journal of Semiconductors, 2016, 37(7): 074006. doi: 10.1088/1674-4926/37/7/074006 ****C S Wang, Y H Xu, Z Wen, Z K Chen, R M Xu. An improved temperature-dependent large signal model of microwave GaN HEMTs[J]. J. Semicond., 2016, 37(7): 074006. doi: 10.1088/1674-4926/37/7/074006.
      Citation:
      Changsi Wang, Yuehang Xu, Zhang Wen, Zhikai Chen, Ruimin Xu. An improved temperature-dependent large signal model of microwave GaN HEMTs[J]. Journal of Semiconductors, 2016, 37(7): 074006. doi: 10.1088/1674-4926/37/7/074006 ****
      C S Wang, Y H Xu, Z Wen, Z K Chen, R M Xu. An improved temperature-dependent large signal model of microwave GaN HEMTs[J]. J. Semicond., 2016, 37(7): 074006. doi: 10.1088/1674-4926/37/7/074006.
      shu

      An improved temperature-dependent large signal model of microwave GaN HEMTs

      DOI: 10.1088/1674-4926/37/7/074006

      • EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

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      • Corresponding author: Xu Yuehang,yuehangxu@uestc.edu.cn
      • Received Date: 2015-11-14
      • Accepted Date: 2015-12-24
      • Published Date: 2016-07-25

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