Journal of Semiconductors

In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Guest Editors:

Xiaoxing Ke

Yong Zhang

Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Xiaoxing Ke, Yong Zhang

2022, 43(4): 040101, doi: 10.1088/1674-4926/43/4/040101
In-situ/operando characterization techniques for organic semiconductors and devices

Sai Jiang, Qinyong Dai, Jianhang Guo, Yun Li

2022, 43(4): 041101, doi: 10.1088/1674-4926/43/4/041101
Comprehensive, in operando, and correlative investigation of defects and their impact on device performance

Yong Zhang, David J. Smith

2022, 43(4): 041102, doi: 10.1088/1674-4926/43/4/041102
Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

Luying Li, Yongfa Cheng, Zunyu Liu, Shuwen Yan, Li Li, Jianbo Wang, Lei Zhang, Yihua Gao

2022, 43(4): 041103, doi: 10.1088/1674-4926/43/4/041103
In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes

Zhen Fang, Yao Liu, Chengyi Song, Peng Tao, Wen Shang, Tao Deng, Xiaoqin Zeng, Jianbo Wu

2022, 43(4): 041104, doi: 10.1088/1674-4926/43/4/041104
Structural evolution of low-dimensional metal oxide semiconductors under external stress

Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang

2022, 43(4): 041105, doi: 10.1088/1674-4926/43/4/041105
Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors

Xiaomei Wu, Xiaoxing Ke, Manling Sui

2022, 43(4): 041106, doi: 10.1088/1674-4926/43/4/041106

Previous: Twisted van der Waals Heterostructures

Search

All Special Issues

Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays
—Celebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST

Special Issue on Towards High Performance Ga₂O₃ Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)

Novel Semiconductor-biochemical Sensors

Twisted van der Waals Heterostructures

In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Flexible Energy Devices

Semiconductor Optoelectronic Integrated Circuits

Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Advanced Analog and Mixed-Mode Integrated Circuits

Challenges and Possibilities of Energy Storage

Monoelemental 2D Semiconducting Materials and Their Applications

Quantum Transport in Mesoscopic Systems

Perovskite Semiconductor Optoelectronic Materials and Devices

Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications

Reconfigurable Computing for Energy Efficient AI Microchip Technologies

Celebration of the 60^th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

Ultra-Violet Optoelectronic Materials, Devices and Applications

Flexible and Wearable Sensors for Robotics and Health

Compound Semiconductor Materials and Devices on Si

A Celebration of the 100^th Birthday of Prof. Kun Huang

Challenges and Possibilities of Magnetic Semiconductors

Quantum Light Sources from Semiconductors

2D-materials-related physical properties and optoelectronic devices

Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Semiconductor Materials Genome Initiative: New Concepts and Discoveries

Si-Based Materials and Devices

Flexible and Wearable Electronics: from Materials to Applications

Devices and Circuits for Wearable and IoT Systems

2D Materials and Devices

Perovskite Solar Cells

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2