Journal of Semiconductors

Call for Papers

Phase change materials (PCM), such as chalcogenides, correlated oxides and two-dimensional materials, could achieve dramatic refractive index change or resistance change through a solid phase transition, which made them emerging platforms for reconfigurable photonics and electronics. Reconfigurable photonics based on PCMs offer a path to alter the routing and phase delay with low power consumption and compact footprint inside a photonic system, which are important for large-scale optical switching networks, neuromorphic computing, active metasurface, etc. And the PCM had been widely applied for electronic memory and reconfigurable circuits, which would be critical for non-von Neumann computing, such as in-memory computing and neuromorphic computing. With the fast development of PCM for reconfigurable photonics and electronics, we want to organize a special issue in the Journal of Semiconductors. Both review papers and research articles are welcome.

This special issue focuses but not limited to the following topics:

1.      Theory and modeling of novel phase change materials.

2.      Reconfigurable PCM integrated photonic devices and metasurfaces.

3.      Phase change memory for non-von Neumann computing.

4.      Two-dimensional phase change materials and devices

5.      In-memory photonic and electronic devices.

6.      Color filters and thermal emitters.

7.      The applications of reconfigurable electronic and photonic circuits based on PCM.

Guest Editors:

Dr. Hongtao Lin, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, 310027, China, Email: hometown@zju.edu.cn

Dr. Tian Gu, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, 02139, United States, Email: gutian@mit.edu

Manuscript Submission:

Manuscripts must be prepared according to the Journal’s guidelines, available at, http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm. Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify well in advance for your intention to submit a research paper.

Key Timetable Dates:

Manuscript Submission Deadline: Nov. 1, 2023

Publication Date: Mar. 1, 2024

Call for Papers

Gallium oxide (Ga₂O₃) is graining tremendous traction for power electronics applications due to its high breakdown field. Ga₂O₃ possesses an ultra-wide bandgap of 4.8 eV, well above  SiC and GaN (3.3~3.4 eV). Extensive research efforts have been devoted to developing effective epitaxial growth method for high quality Ga₂O₃ films and exploring high performance  Ga₂O₃ electronic devices. Exciting research achievements have been achieved in Ga₂O₃ large  size substrate, epitaxial growth techniques, and devices. These progresses make Ga₂O₃ promising for realizing more efficient, high power, high frequency power electronics. 

This special issue focuses on recent progress in the topics related to Ga₂O₃ epitaxial growth  and electronic devices. Both experimental and theoretical works will be accepted. We invite  submission of original research articles/communications and comprehensive review papers to  this special issue. The topics to be covered in this special issue include, but are not limited to:

l　High voltage Ga₂O₃ electronic devices;

l　Ga₂O₃ radio frequency devices;

l　Ga₂O₃ heterojunction devices;

l　High quality epitaxial growth of Ga₂O₃ films;

l　Heterogeneous integration of Ga₂O₃ on foreign substrates;

l　Theoretical modelling and simulation of Ga₂O₃ device;

l　Large-size Ga₂O₃ single crystals and wafers.

GUEST EDITORS:

Prof. Genquan Han,, School of Microelectronics, Xidian University, Xian’an, Shaanxi  710071, China. 

Email: gqhan@xidian.edu.cn

Prof. Shibing Long, School of Microelectronics, University of Science and Technology of  China, Hefei, Anhui 230026, China.

Email: shibinglong@ustc.edu.cn

Assist. Prof. Yuhao Zhang, Center for Power Electronics Systems (CPES), Virginia  Polytechnic Institute and State University, Blacksburg, VA 24060 USA. 

Email: yhzhang@vt.edu

Dr. Yibo Wang, Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese  Academy of Sciences, Suzhou 215123, China.

Email: ybwang2022@sinano.ac.cn

Manuscript Submission:

Manuscripts should be prepared according to Journal’s guidelines, available at http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm. 

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify well in advance for your intention to submit a research paper.

Key Timetable Dates:

Manuscript Submission Deadline: December 31, 2022

Authors’ notification: February 28, 2023

Publication Date: May 31, 2023

Call for Papers

Since 2020, the global outbreak and continued evolution of the COVID-19 pandemic have brought the concepts of PCR, antigen-antibody, gene sequencing, and other biochemical testing into ordinary families. In this regard, the importance of novel semiconductor-biochemical sensors is becoming increasingly evident. These sensors deeply fuse the technical advantages of semiconductors and biochemistry, integrating interdisciplinary subjects such as molecular biology, nanomaterials, microfluidics, artificial intelligence, etc. With the advantages of fast speed, high sensitivity, high integration, easy mass manufacturing, the novel technologies are the "pioneer" of biomedical information acquisition and the "heart" of modern medical diagnostic equipment. Furthermore, those can achieve dynamic monitoring of animal/plant physiology and rapid detection of highly pathogenic pathogens, widely used in agriculture, aquaculture, animal agriculture, biosecurity and other fields. The effect is to comprehensively enhance the level of information and intelligence development of the industry.

With the fast development of novel semiconductor-biochemical sensors, we want to organize the special issue on the Journal of Semiconductors. Both review papers and research articles are welcome.

This special issue focus but not limited to the following topics:

l　Rapid detection of COVID-19

l　Early and accurate detection of disease

l　Animal and plant pathogens detection

l　Wearable Biochemical Sensors

GUEST EDITORS:

Zhao Li, Associate Researcher Fellow, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100086, China, Email: zhaoli@semi.ac.cn

Xiangmei Lin, Researcher Fellow, Chinese Academy of Inspection and Quarantine, Beijing, 100123, China, Email: linxm@caiq.org.cn

Dongxian He, Professor, College of Water Resources and Civil Engineering, China Agricultural University, Beijing, 100083, China, Email: hedx@cau.edu.cn

Yingxin Ma, Associate Researcher Fellow, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China, Email: yx.ma1@siat.ac.cn

Yuanjing Lin, Assistant Professor, School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518033, China, Email: linyj2020@sustech.edu.cn

Manuscript Submission:

Manuscripts should be prepared according to Journal’s guidelines, available at http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm. 

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify well in advance for your intention to submit a research paper.

Key Timetable Dates:

Manuscript Submission Deadline: Nov 25, 2022

Manuscript Acceptance Deadline: Dec 25, 2022

Publication Date: February, 2023

Call for Papers

Since the first discovery of graphene at 2004, two-dimensional (2D) van der Waals materials have attracted large attentions due to their unique properties and potential applications in various areas. Many 2D semiconducting materials with natural bangap such as the 2D metal chalcogenides, are utilized in high performance optoeletronics. As a special group in the 2D family, monoelemental 2D materials (such as phosphorene, silicene, germanene, arsenene, antimonene, tellurene,etc.) confirmed new opportunities in the functionality and device applications. With the fast development of monoelemental 2D semiconducting materials, we want to organize the special issue on Journal of Semiconductors. Both review paper and research articles are welcome.

This special issue focus but not limited to the following topics:

l　Design, synthesis and fabrication of monoelemental 2D semiconducting materials.

l　Theory and modeling of monoelemental 2D semiconducting materials.

l　Electronic, optical, magnetic and other properties of novel monoelemental 2D semiconducting materials.

l　Application and hetero-integration of monoelemental 2D semiconducting materials, including electronic, optoelectronic and other devices.

GUEST EDITORS:

Prof. Han Zhang, Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen, 518060, China

Email: hzhang@szu.edu.cn

Prof. Yeliang Wang, School of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, China

Email: yeliang.wang@bit.edu.cn

Prof. Krassimir Panajotov, Department of Applied Physics and Photonics (IR-TONA),Vrije Universiteit Brussels, Pleinlaan 2, B-1050 Brussels, Belgium 

Email: kpanajot@b-phot.org

Prof. Shengli Zhang, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China 

Email: zhangslvip@njust.edu.cn

Manuscript Submission:

Manuscripts must be prepared according to the Journal’s guidelines, available at, http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm. Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify well in advance for your intention to submit a research paper.

Key timetable dates:

Manuscript Submission Deadline: May 31, 2020

Publication Date: August 1, 2020

      Call for Papers

Driven by new emerging services and applications such as broadband networks, big data integration and artificial intelligence, the new generation of information technology is developing very fast in the past few years. The data flow shows an explosive growth rate of 60% per year, while the bandwidth capacity of optoelectronic devices only increases by about 10% per year. Therefore, the rapid growth of data flow has posed severe challenges to the performance of semiconductor optoelectronic devices in terms of bandwidth, capacity, cost, and power consumption. Full-spectrum, high-speed, large capacity and intelligent optical communication networks urgently demand higher performance integrated optoelectronic devices. At the same time, the development of current photonic devices is generally considered in the era of "single transistor" and on the eve of technology reform. In the future, if the optoelectronic technology would be able to play a key role in the new generation of information technology like the microelectronics technology, it must rely on the semiconductor optoelectronic integration circuits technology.

This special issue will invite distinguished researchers in the field of semiconductor optoelectronic integration to contribute review papers, latest research progress articles, views and perspective articles to cover the research history and current situation, bottleneck and challenge, opportunity and trend of optoelectronic integrations. The special issue will provide a reference to the field of semiconductor optoelectronic integrated circuits. Welcome worldwide distinguished experts to make contributions to this special issue!

Topics of the special issue (but not limited to):

l　Fundamental theoretical model and numerical simulation technology.

l　Optoelectronics materials growth and fabrication processing technology.

l　Advanced optoelectronic packaging and testing technology.

l　High-performance III-V semiconductor optoelectronic unit devices (lasers, modulators, and detectors, etc.).

l　Monolithic III-V semiconductor optoelectronic integration technology (laser array, photonic transceiver, etc.).

l　Hybrid optoelectronic integration technology (III-V materials, silicon, silicon nitride, glass materials, etc.).

l　Hybrid optoelectronic integration technology based on new emerging materials (LNOI materials, two-dimensional materials, metamaterials, etc.).

l　Other emerging cross research directions and applications (integrated microwave photonics integration, biphotonic integration, etc.).

Guest Editor-in-chief: Prof. Wei Wang

Prof. Wei Wang, a professor in the Institute of Semiconductors, Chinese Academy of Sciences. He is an academician of the Chinese Academy of Sciences and a semiconductor optoelectronics research expert. He graduated from the department of physics, Peking University in 1960. In the early stage, he has been engaged in the research of dislocation free silicon single crystal and Ⅲ-Ⅴheterojunction liquid phase epitaxy, which has contributed tothe room-temperature operation of GaAs based laser in China. Since 1979, he has been engaged in the research of long-wavelength double heterojunction laser and dynamic single-frequency laser. His major research includes the strained layer multiple quantum well distributed feedback laser, the integration of semiconductor laser and electroabsorption modulation chip, tunable semiconductor laser, etc. In the past ten years, he has led his research group to carry out the research of large-scale photonic integration technology, such as semiconductor laser array, microwave photonics integrated chip, integrated multi-wavelength mode-locked laser, etc. In the meantime, he has established an InP based photonic integration technology platform, trained many experts in the research and development of optoelectronic integrated circuit, and has made great contributions to the development of semiconductor optoelectronic devices for optical communication in China.

GUEST EDITORS:

Prof. Lingjuan Zhao, Institute of Semiconductors, CAS,

Email: ljzhao@semi.ac.cn

Prof. Jianping Yao, University of Ottawa,

Email: jpyao@uottawa.ca

Prof. Weiping Huang, Shandong University,

Email: wphuang_canada@hotmail.com

Prof. Yong Liu, University of Electronic Science and Technology,

Email: yongliu@uestc.edu.cn

Prof. Brent Little, QXP Technologies Inc.,

Email: brent.little@qxptech.com

Manuscript submission:

Online submission: https://mc03.manuscriptcentral.com/jos-iop.

Submit the manuscript to the guest editors via email. 

Important dates:

Deadline for submission: October 1, 2020

Publication date: Februrary 1, 2021

      Call for Papers

In nowadays digital world, analog and mixed-mode chip market still maintain up to 6.6% annual compound growth rate among the years of 2017-2022, according to IC Insights’ forecast. Many novel design techniques have been reported and a lot of achievements have been reached in this field. However, analog and mixed-mode integrated circuits still face significant design challenges, caused by increasingly unfriendly process environment and increasingly demanding design specifications. The SoC integration further increase the design complexity of analog and mixed-mode circuits. New circuit topology and design methodology have to be proposed to address these design challenges.

In this special issue of the Journal of Semiconductors, we call for the most advanced research results on various analog and mixed-mode integrated circuits. We invite submissions of original research articles/communications and comprehensive reviews to this special issue. Topics of interest include (but are not limited to) the following:

l　Phased-locked loop (PLL)-based clock generators.

l　Power management circuits,such as AC-DC converters, DC-DC converters and LDOs.

l　Various analog-to-digital converters (ADCs) and digital-to-analog converters.

l　Time-mode signal processing circuits, such as time-to-digital converters (TDCs) and digital-to-time converters (DTCs).

l　High-speed series interface circuits.

l　Low-voltage/low-power circuits for sensor applications.

l　Analog and mixed-mode EDA tools.

l　Survey and tutorial studies of advanced analog and mixed-mode integrated circuits.

GUEST EDITORS:

Prof. Baoyong Chi, Institute of Microelectronics, Tsinghua University, 100084, Beijing, China,

Email: chibylxc@tsinghua.edu.cn

Web: http://www.ime.tsinghua.edu.cn/publish/ime/5902/index.html

Prof. Nan Sun,Department of Electrical and Computer Engineering, University of Texas at Austin, Austin TX, USA,

Email: nansun@mail.utexas.edu

Web: http://www.ece.utexas.edu/people/faculty/nan-sun

Prof. Liyuan Liu,Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China,

E-mail: liuly@semi.ac.cn

Web: http://lab.semi.ac.cn/yanjiusheng/contents/1323/124616.html

Prof. Yan Lu,State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macau, China,

Email: yanlu@um.edu.mo

Web: http://www.amsv.um.edu.mo/people/yanlu

Manuscript Submission:

Manuscripts must be prepared according to Journal’s guidelines, available at http://iopscience.iop.org/journal/1674-4926.

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify us in advance for your intension to submit a research paper.

Key timetable dates:

Manuscript due: June 30, 2020

Authors’ notification: September 30, 2020

Publication date: October 31, 2020

      Call for Papers

Over the past decades, the mainstream of integrated circuit (IC) industry has been mainly powered by Moore’s Law, which is targeted at achieving faster operation speed, less power dissipation, and lower cost. The key driving force behind Moore's Law is the ongoing MOSFET scaling down to nanoscales. However, this trend is beginning to bump up against the fundamental physical limits on their size, which means the approaching end of the Moore’s Law. Different and revolutionary strategies and approaches are highly and urgently needed to meet the requirements of faster, cheaper, and more energy efficient in the More-than-Moore Era.

This Special Issue is aiming at showcasing the most recent developments and the state-of-the-art in the field of the future/novel microelectronic devices and architectures for the More-than-Moore Era. We invite submissions of new and original materials that have not been copyrighted, published or accepted for publications in any other archival publication to this special issue.

   Topics of interest include (but are not limited to) the following:

l　Advanced CMOS: Material Fundamentals / Process Science / Device Physics / Transistor Architectures

l　Advanced and Emerging Memories / New Applications

l　Advanced Computing Architecture / Application

l　Low Dimensional Devices and Materials

l　Photonics Devices / Integration / Related Technology

l　Photovoltaic / Energy Harvesting / Battery-related Technology

l　Interconnect / 3D Integrations / MEMS

l　Power / High-speed Devices and Materials

Guest Editor-in-Chief: Prof. Yue Hao

Yue Hao, a Professor of Xidian University, is an Academician of Chinese Academy of Sciences (CAS), a microelectronics expert, the Convener of the 7th discipline appraisal group (electronic science and technology level of discipline) of the State Council, the Chairman of the teaching guide committee of electronic information engineering major in higher education, and the Director of the National Natural Science Fund Committee of Information Science.

Professor Hao has been engaged in scientific research and talent training in the fields of new-type wide bandgap semiconductor materials and devices, micro-and-nanometer semiconductor devices and highly reliable integrated circuits for a long time. He has made systematic creative achievements both in research on and in promotion of the third-generation gallium nitride/silicon carbide (wide bandgap) semiconductor functional materials & microwave devices, and semiconductor illuminating short-wavelength photoelectric materials & devices and in the research on the reliability andmicro-nano meter CMOS/beyond and novel memory devices. Up to now, Professor Hao has published more than 500 SCI articles; and obtained about hundred authorization of national invention patents. He authored several scientific books and monographs as well, including “Nitride Wide Bandgap Semiconductor Material and Electronic Devices” and so on.

GUEST EDITORS:

Prof. Huaqiang Wu, Tsinghua University,

Email: wuhq@tsinghua.edu.cn

Prof. Yuchao Yang, Peking University,

Email: yuchaoyang@pku.edu.cn

Prof. Qi Liu, Institute of Microelectronics, Chinese Academy of Sciences,

Email: liuqi@ime.ac.cn

Prof. Xiao Gong, National University of Singapore,

Email: elegong@nus.edu.sg

Prof. Genquan Han, Xidian University,

Email: gqhan@xidian.edu.cn

Prof. Ming Li, Institute of Semiconductors, Chinese Academy of Sciences,

Email: ml@semi.ac.cn

Manuscript Submission:

Manuscripts must be prepared according to the Journal’s guidelines, available at, http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm. Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.

Please notify well in advance for your intention to submit a research paper.

Key timetable dates:

Manuscript Submission Deadline: June 1, 2020

Publication Date: September 1, 2020

The 20th International Workshop on Junction Technology (IWJT2020) will be held on May 9 - 10, 2020 in Shenzhen, China.

As CMOS device continues scaling-down, source/drain junction engineering becomes one of the most critical issues for CMOS fabrication. To meet tremendous demand for sharing ideas on junction technology, International Workshop on Junction Technology started from 2000 and was held annually in Japan or China. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology, which makes the workshop a high-level scientific forum for experts in this field to exchange their ideas and information.

The main focus of IWJT-2020 is on junction technologies for nanometer CMOS devices, compound semiconductors, wide-bandgap semiconductors and two-dimensional semiconductors. The workshop will provide a good opportunity for researchers and engineers to present their new research results, share the latest information, keep pace with the rapid development of semiconductor technology, and exchange ideas with leading scientists in this field.

Workshop Scope

(Papers are solicited in, but not limited to the following areas)

Doping Technology --- Ion implantation, plasma doping, gas and solid doping  
Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects  
Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and  bonding junctions  
Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment  
Junction and Contact Technologies for Compound Semiconductors,  2D Semiconductors and Quantum Devices --- Schottky and ohmic contacts to compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other nano-, quantum devices, hetero-junction devices  
Technologies for Wide Band-gap Semiconductor Devices --- Technologies for SiC, GaN, AlN, Ga2O3 and Ultra-wide bandgap semiconductors devices for optoelectronics, power electronics, MEMS, sensors, RF and 5G Mobile communication  
Contact and Junction Technologies for Energy Harvesting Devices --- solar cells  
Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction  
Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS  
Equipment, Materials and Substrates for Junction Technology

Paper Submission

Prospective authors are requested to submit the camera-ready full-length papers. Camera-ready full-length late news papers are also accepted. A notice of acceptance will be announced after review. The proceedings will have an IEEE catalogue number and may be collected in IEEE publication database----IEEE X’plore. The proceedings will be published before the workshop and distributed at the workshop.

Important Dates

Deadline for Full-Length Paper Submission: Mar. 15, 2020  
Notification of Acceptance: Mar. 31, 2020  
Deadline for Late News Submission: Mar. 31, 2020

Email submission with a cover letter to iwjt2020@sustech.edu.cn is preferred.
Please use the first author or corresponding author’s name as a filename, eg., authorname.doc or authorname.pdf.

About paper submission, please contact:

Prof. Huaiyu YE
School of Microelectronics
Southern University of Science and Technology
Shenzhen 518055, China
E-mail: yehy@sustech.edu.cn

More information about IWJT-2020 can be found at web site: https://sme.sustech.edu.cn/index/huiyi/index

CALL FOR PAPERS

Many Artificial Intelligence (AI) processing tasks, especially those related to deep neural networks, are both computation and memory intensive. Yet the traditional computing platforms such as CPU are increasingly facing difficulties in dealing with those massive workloads. Reconfigurable Computing (RC) features the ability to perform computations in hardware to increase execution capabilities, and at the same time retain much of the flexibility of a software solution. The microchip design based on the Reconfigurable Computing models and principles has emerged as an effective means to ensure that the AI applications can be accelerated to not only meet the performance and throughput targets but also power and energy efficiency requirements.

In this special issue of the Journal of Semiconductors, we call for the most advanced research results on various AI microchip design technologies based on the Reconfigurable Computing architectures. We invite submissions of original research articles/communications and comprehensive reviews to this special issue. Topics of interest include (but are not limited to) the following:

l　 Software/Compilers/Tools for mapping deep neural networks to RC-based accelerators 
l　Micro-architecture designs of hardware accelerators for RC
l　Deep neural network acceleration on existing accelerators such as FPGA, CGRA, or PSoC 
l　RC-based acceleration for edge computing and IoT; RC-based acceleration for cloud computing
l　 Hardware friendly deep neural network modeling, optimization, quantization, and compression Comparison studies of different RC-based acceleration architectures (FPGAs, CGRAs, PSoCs, etc.)
l　Reconfigurable approaches applied to analog or mixed signal integrated circuits and signal processing
l　Reconfigurable design for intelligent MEMS sensory systems
l　Survey and tutorial studies of AI microchip design technologies based on the Reconfigurable Computing architectures.

Prof. Shaojun Wei of Tsinghua University will preface this special issue in the Comments and Opinions.

GUEST EDITORS:

Prof. Haigang Yang, Institute of Electronics, Chinese Academy of Sciences, 100190, Beijing, China.   
E-mail: yanghg@mail.ie.ac.cn
Web: http://people.ucas.edu.cn/~yanghg
Prof. Yajun Ha, School of Information Science and Technology, ShanghaiTech University, 201210, Shanghai, China.    
E-mail: hayj@shanghaitech.edu.cn
Web: http://old.shanghaitech.edu.cn/faculty/sist/people/1245.html
Prof. Lingli Wang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China.   
E-mail:  llwang@fudan.edu.cn
Web:  https://sme.fudan.edu.cn/info/detail?id=178
Prof. Wei Zhang, Reconfigurable Computing Systems Lab, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China   
E-mail: wei.zhang@ust.hk
Web:  http://www.ece.ust.hk/~eeweiz/
Prof. Yingyan Lin, Efficient and Intelligent Computing (EIC) Lab, Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005-1892, USA   
E-mail: yingyan.lin@rice.edu
Web:  http://yl150.web.rice.edu/eicl_index.html

Manuscript Submission:

Manuscripts must be prepared according to Journal’s guidelines, available athttp://iopscience.iop.org/journal/1674-4926 .

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop 

Please notify well in advance for your intension to submit a research paper.

Key timetable dates:

Manuscript due: August 31, 2020  
Authors’ notification: September 30, 2020
Publication date: Publication date: October 31, 2020

CALL FOR PAPERS

   Human body with curved and soft interface requests advanced flexible materials and structures for the interaction with organs and signal collection from targets in applications of e.g. bioengineering and diagnostic devices. Among them, it is highly demanded for creative design in flexible materials and structures with great stretchable capability for required applications. To meet such purpose, both inorganic and organic materials could be adopted and designed with assembly and self-assembly methods for flexible electronics and electrodes. Soft or flexible materials and structures inspired by nature can take the advantage of highly conformal contacts between devices and the human body. These approaches hold great potential for applications in flexible electronics, medical imaging technology and portable disease diagnostics. Novel strategy on related sensors/actuator and energy storage/generation devices could overcome certain limitation on flexible materials engineering and thus advance the field as well.

   This special issue is aiming at showcasing recent advances in all topics related to bioengineering, sensing, and energy applications with the special focus on flexible materials and their structures. We will accept both experimental and theoretical work. We invite submissions of original research articles/communications and comprehensive reviews to this special issue. Following topics are included to be covered in this special issue, but are not limited to:

l　Self-assembly and assembly of flexible materials and structures
l　Advanced semiconductor materials for flexible electronics
l　Bio-inspired soft materials and structures
l　Flexible material approaches for tissue engineering
l　Flexible materials and interface for new medical imaging technology
l　Portable disease diagnostic devices
l　Sensor and actuator
l　Energy storage and conversion

GUEST EDITORS

Prof. Yongfeng Mei, Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, 200433 Shanghai, PR China.  
Group website: http://nanomem.fudan.edu.cn/ 
E-mail: yfm@fudan.edu.cn 

Prof. Wei Gao, Department of Medical Engineering, Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, USA.  
Group web: http://www.gao.caltech.edu   
Email: weigao@caltech.edu  

Prof. Hui Fang, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA.  
Group website: https://www.northeastern.edu/fang/    
E-mail: h.fang@northeastern.edu

Prof. Yuan Lin, State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China.  
Group website: http://www.ese.uestc.edu.cn/front/teacherMain?id=55
  E-mail: linyuan@uestc.edu.cn  

Prof. Guozhen Shen, Institute of Semiconductors, Chinese Academy of Sciences, PR China  
Group website: http://www.escience.cn/people/gzshen   
E-mail: gzshen@semi.ac.cn 

Manuscript Submission:

Manuscripts much be prepared according to Journal’s guidelines, available at http://iopscience.iop.org/journal/1674-4926 .

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at  https://mc03.manuscriptcentral.com/jos-iop 

Please notify well in advance for your intension to submit a research paper.

Key timetable dates:

Manuscript due: September 31, 2020
Authors’ notification: October 31, 2020  
Publication date: November 31, 2020

CALL FOR PAPERS

Flexible and wearable sensors that can acquire signals of pressure, temperature, optical input, chemical environment as well as human body physiological and biological parameters, are of critical importance for robotics and health, in which these sensors are hence in urgent demands. On the fundamental side, there are still substantial challenges on how to design and fabricate materials with biocompatibility, robustness and excellent mechanical flexibility, as well as sensor devices with high performance, low power consumption and good system integration capability. Meanwhile in practical applications, there are also obstacles on integration of various kinds of sensors with flexible substrates, signal processing and power supply units. With the fast development of Internet of Things (IoT), smart sensors will also be interconnected to form sensor networks that provide big data for our future intelligent living. All these would deliver a profound socio-economic impact to our society.

This special issue is aiming at reviewing recent advance in all topics related to flexible and wearable sensors with the special focus on robotic and health applications. We will accept both experimental and theoretical works. We invite submissions of original research articles/communications and comprehensive reviews to this special issue. Following topics are included to be covered in this special issue, but are not limited to:

l　Epidermal electronics;
l　Flexible/wearable optoelectronic, chemical/gas devices;
l　Flexible/wearable power supply devices;
l　Flexible/wearable data storage devices;
l　Flexible/wearable sensor systems;
l　Skin-laminated piezoresistive/piezoelectric Sensors;
l　Multifunctional artificial skins.

GUEST EDITORS

Prof. Zhiyong Fan, Hong Kong University of Science and Technology, Hong Kong SAR, China.
Group website: http://www.ece.ust.hk/~eezfan/
E-mail: eezfan@ust.hk  

Prof. Johnny C. Ho, City University of Hong Kong, Hong Kong SAR, China.
Group website: http://www.HOCityU.com
E-mail: johnnyho@cityu.edu.hk 

Prof. Chuan Wang, Washington University in St. Louis, MO 63130, USA.
Group website: https://wanggroup.wustl.edu/chuan-wang/
E-mail: chuanwang@wustl.edu

Prof. Yunze Long, Qingdao University, Qingdao 266071, China.
E-mail: yunze.long@qdu.edu.cn  

Manuscript Submission:

Manuscripts much be prepared according to Journal’s guidelines, available at http://iopscience.iop.org/journal/1674-4926 . 

Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at  https://mc03.manuscriptcentral.com/jos-iop 

Please notify well in advance for your intension to submit a research paper.

Key timetable dates:

Manuscript due: June 31, 2019
Authors’ notification: July 31, 2019
Publication date: September 31, 2019

CALL FOR PAPERS

Since the first discovery of graphene on 2004, ultrathin two-dimensional (2D) materials (e.g. Xenes, MX, MX2, nitrides, oxides and etc.) have attracted broad interest due to their unique properties that are absent in bulk counterparts. Recent advances of van der Waals (vdW) 2D materials provide a new opportunity to realize atomically sharp interfaces in the ultimate quantum limit. As a potential and promising choice of the next-generation semiconductors, 2D materials have been explored in various aspects of condensed matter physics and materials science. Also, 2D vdWheterostructures are found to critically depend on the interlayer charge transport, electron-hole recombination process mediated by tunneling across the interface. The electronic optoelectronic performances in the vdWheterostructures can be enhanced and tuned by applying gate voltages, which may provide a fundamental platform to realize novel physical phenomena and device applications.

This special issue will contain articles on emergent 2D materials (including graphene and other Xenes, BN, transition metal dichalcogenides, group-IV and group-III metal chalcogenidesand etc.) and their electronic and optoelectronic physics. Topics include but not limited to:

1) Synthesis and large-scale growth of 2D materials;
2)Structural, electronic, optical, magnetic and other novel properties (e.g. valleytronics, tunnel junctions, etc.) of 2D materials and their heterostructures;
3) Novel electronic and optoelectronic devices of 2D materials and their heterostructures;
4)Theory and modeling of 2D materials and their devices;
5) Potential technology and application in 2D materials (e.g., integration and scalable device manufacture, transfer free device integration, display technology, etc.).

The issue attempts to provide a latest overview of the rapid developing research area of 2D materials. We sincerely hope that this issue on 2D materials can benefit researches on this topic.

GUEST EDITORS:

Prof. Ping-Heng Tan, Institute of Semiconductors, CAS, Beijing, China
Prof. Shuyun Zhou, Tsinghua University, Beijing, China
Prof. Lun Dai, Peking University, Beijing, China
Prof. Lijun Zhang, Jilin University, Changchun, China

Manuscript Submission:

Manuscripts much be prepared according to Journal’s guidelines, available at http://iopscience.iop.org/journal/1674-4926.
Submit your manuscripts via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.
Please notify well in advance for your intension to submit a research paper.

Key timetable dates:

Manuscript due: February 28, 2019
Authors’ notification: March 31, 2019
Publication date: April 30, 2019