High-speed electro-absorption modulated laser

Zhenyao Li; Chen Lyu; Xuliang Zhou; Mengqi Wang; Haotian Qiu; Yejin Zhang; Hongyan Yu; Jiaoqing Pan

doi:10.1088/1674-4926/25030015

J. Semicond. > Just Accepted

REVIEWS

High-speed electro-absorption modulated laser

Zhenyao Li^{1, 2}, Chen Lyu^{1, 2}, Xuliang Zhou^{1, 2}, Mengqi Wang^{1, 2}, Haotian Qiu^{1, 2}, Yejin Zhang^{1, 2}, Hongyan Yu^{1, 2,} and Jiaoqing Pan^{1, 2,}

+ Author Affiliations

1. State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

Author Bio:

Zhenyao Li got his bachelor's degree from Nankai University in China, and master's degree from Institute of Semiconductors, Chinese Academy of Sciences in China. Now, he is a Ph.D. student supervised by Prof. Jiaoqing Pan in the Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences. His current research focuses on High-Speed Electro-absorption Modulated Laser.

Hongyan Yu got her M. E. degree in microelectronics and solid state electronics from the Shandong University in 2011. Since 2011 she has been with the key laboratory of semiconductor materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, as a research associate, where she worked on hybrid InGaAsP/Si evanescent lasers and widely tunable long wavelength DBR lasers for gas detection.

Jiaoqing Pan got his bachelor's degree, master's degree and doctor's degree from Shandong University in 1997, 2000 and 2003 respectively. Since 2011 he has been with the key laboratory of semiconductor materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, as a Full Professor. His research interests are silicon-based Laser Radar chips, Ⅲ-Ⅴ group high-speed modulated lasers and monolithic integrated information optoelectronic chips.

Corresponding author: Hongyan Yu, jqpan@semi.ac.cn; Jiaoqing Pan, hyyu09@semi.ac.cn

DOI: 10.1088/1674-4926/25030015CSTR: 32376.14.1674-4926.25030015

Abstract: Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.

Key words: electro-absorption modulation, high-speed laser, modulation bandwidth, data transmission rate

References

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Fig. 1. (Color online) (a) Schematic diagram of the EML structure. (b) Process scheme for wavelength matching between the DFB laser and the EAM. Reproduced with permission from Ref. [2]. Copyright 2020, Chinese Laser Press. (c) The spectrum of the data signal is sculpted using dual DFB and EAM modulation. (d) EML applied as a simple direct detection receiver for incident optical signals. (e) EML applied as a coherent transceiver for full-duplex data transmission. Reproduced with permission from Ref. [4]. Copyright 2020, The Institution of Engineering and Technology.

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Fig. 2. (Color online) (a) Schematic diagram of the structure of the hybrid waveguide EML. Reproduced with permission from Ref. [10]. Copyright 2024, IEEE. (b) Electro-optical (EO) frequency response of the EML chip, current 60 mA, EA bias voltage −2.2 V, temperature 40 °C. Reproduced with permission from Ref. [14]. Copyright 2025, Optica Publishing Group. (c) PAM4/PAM6 optical eye measurement results under BtB conditions. Reproduced with permission from Ref. [14]. Copyright 2025, Optica Publishing Group.

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Fig. 3. (Color online) (a) 53 GBaud-PAM4 EML. (b) Frequency response. (c) 53.125 GBaud-PAM optical eye diagram. Reproduced with permission from Ref. [16]. Copyright 2023, Sumitomo Electric Industries, Ltd.

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Fig. 4. (Color online) (a) 3D schematic diagram of hybrid EML. (b) EO parameter plot. (c) Optical eye diagram of 200 Gbps data transmitted over 2 km of optical fiber after equalization, with the upper and lower channels being 1270 nm and 1330 nm, respectively. Reproduced with permission from Ref. [17]. Copyright 2023, IEEE.

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Fig. 5. (Color online) (a) Schematic diagram of EML. (b) EO response at 50°C. (c) Eye diagram of 1321.5 nm after 500 m and 2 km transmission. Reproduced with permission from Ref. [18]. Copyright 2022, IEEE.

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Fig. 6. (Color online) (a) Schematic diagram of Hi-FIT AXEL module structure. Reproduced with permission from Ref. [22, 23]. Copyright 2020, Optica Publishing Group. Copyright 2023, IEEE. (b) Schematic diagram of AXEL. (c) Simulated and measured EO response of the Hi-FIT AXEL module. (d) PAM4 eye diagram at 224 Gbps BtB configuration. (e) SOA current dependence of average output power and TDECQ. Reproduced with permission from Ref. [25]. Copyright 2023, Optica Publishing Group.

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Fig. 7. (Color online) (a) Schematic diagram of EML-SOA. (b) BER under BtB conditions. (c) From top to bottom, the optical eye diagram after passing through the PAM4 encoder, EML, and SOA. Reproduced with permission from Ref. [30]. Copyright 2023, Optica Publishing Group.

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Fig. 8. (Color online) (a) Schematic diagram of the cross-sectional structure of EML. (b) Frequency response at different temperatures. (c) Receiver eye diagram under 100 GBd PAM4 modulation. Reproduced with permission from Ref. [34]. Copyright 2022, IEEE. (d) Photograph of an 800 Gbps optical transceiver, including 8-channel EML. (e) Eye diagrams of NRZ and PAM4 signals for 53.125 GBaud signals on the 8-channel transceiver. Reproduced with permission from Ref. [35]. Copyright 2024, IEEE.

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Fig. 9. (Color online) (a) Schematic diagram of the IA-EML device. (b) Small signal EO response with a laser diode (LD) current of 60 mA at 25 and 45°C. (c) Eye diagram of a 26.56 Gbaud PAM4 signal at a LD current of 60 mA and a bias voltage of 1.60 V. Reproduced with permission from Ref. [37]. Copyright 2024, Optica Publishing Group. (d) The magnified view of the photo of the lumped-EML submodule. (e) EO response of the lumped-EML submodule at different matched load resistor values and (f) Measured PAM4 optical eye diagram of the lumped-EML submodule at a data rate of 224 Gbps. Reproduced with permission from Ref. [38]. Copyright 2024, Optica Publishing Group.

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Fig. 10. (Color online) (a) Schematic diagram and optical image of the chip. (b) Small signal response curve. (c) Eye diagram of NRZ data modulation at 25 Gbps BtB. Reproduced with permission from Ref. [44]. Copyright 2024, IEEE.

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Fig. 11. (Color online) (a) Layer structure of EML and optical waveguide. (b) EO frequency response of EML under 50 Ω termination and open conditions. (c) 100 Gbps PAM4 eye diagram through the terminal traveling wave electrode with 50 Ω resistor. Reproduced with permission from Ref. [45]. Copyright 2023, IEEE.

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Fig. 12. (Color online) (a) Schematic diagram of the structure of the EML COC submodule. (b) Simulation and measurement curves of the submodule RF modulation response. (c) Measured eye diagram of a 53-GBaud PAM4 signal. Reproduced with permission from Ref. [47]. Copyright 2023, IEEE.

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Fig. 13. (Color online) (a) Microscope image of the fabricated 53 Gbps tunable transmitter chip. (b) Measured EO response (blue line) and calculated EO response (red line). (c) 53 Gbps BtB eye diagram at wavelength 1556.54 nm. Reproduced with permission from Ref. [48]. Copyright 2024, Optica Publishing Group.

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Table 1. Comparison of EML R&D related performance parameters and technologies of various units

Unit/ Parameter	$ {f}_{3-\mathrm{d}\mathrm{B}} $ (GHz)	Bit rate (Gbps)	Wave band	MQW	Structure	Main technology
NTT	64	224 PAM4	O, C	InGaAsP	AXEL, multi-channel, etc.	Flip chip interconnect, PPR, etc.
Mitsubishi	106	340 PAM4, 450 PAM6	O	InGaAsP	Hybrid waveguide, BH, narrow high-table EAM,	GSG dual wire, optimized terminal resistance
Sumitomo	41	106 PAM4	O	InGaAsP	Multi-channel	BJG, suppressing electron overflow and non-uniform hole injection
Broadcom	60	200 PAM4	O	InGaAsP	CMBH	Tapered transition
Lumentum	93	225 PAM4, 420 PAM8	O	InGaAsP	Low-length EAM	Insulation pad height, reducing pad parasitic capacitance
Huawei	45	100 PAM4	O	InGaAlAs	Four-stage	Phase-shift grating, anti-reflection coating, multi-channel
HHI	67	200 PAM4	O, C	InGaAlAs	Three-stage, GSG	LC oscillation
ETRI	55	224 PAM4	O	InGaAsP	IA-EML	Selective area epitaxy, secondary coupling butt growth, etc.
Institute of Semiconductors, CAS	33	50 NRZ	O, C	InGaAlAs	Inverted ridge, etc.	Phase-shift grating, LC oscillation, etc.
National Sun Yat-sen University	67	116 PAM4	O, C	InGaAsP	IFVD, vertical coupling, etc.	Combining COC with carrier RF response
Huazhong University of Science and Technology	53	106 PAM4	C	InGaAlAs	IAL, vertical coupling	VCL uses shallow etching, EAM uses deep etching
Zhejiang University	40	53 NRZ	C	InGaAlAs/InP	VCL	Flip chip interconnect, PPR, etc.

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[1]	Zhao Y S, Xue X W, Ren X F, et al. Optical switching data center networks: understanding techniques and challenges. J Comput Netw Commun, 2023, 1(2), 272
[2]	Sun C Z, Yang S H, Xiong B, et al. Progress in high-speed electroabsorption modulated lasers. Chin J Laser, 2020, 47(7), 0701002 doi: 10.3788/CJL202047.0701002
[3]	Diamantopoulos N P, Yamazaki H, Yamaoka S, et al. >100-GHz bandwidth directly-modulated lasers and adaptive entropy loading for energy-efficient >300-Gbps/λ IM/DD systems. J Light Technol, 2021, 39(3), 771 doi: 10.1109/JLT.2020.3021727
[4]	Schrenk B. Electroabsorption-modulated laser as optical transmitter and receiver: Status and opportunities. IET Optoelectron, 2020, 14(6), 374 doi: 10.1049/iet-opt.2020.0010
[5]	Yasaka H, Yokota N, Shindo T, et al. Improvement in bandwidth of an electro-absorption modulator by optical pre-emphasis utilizing photon-photon resonance. IEICE Electron Express, 2024, 21(2), 20230594 doi: 10.1587/elex.20.20230594
[6]	Gu H T, Zhang Y, Yuan Z T, et al. Application and research progress of InP-based electroabsorption modulated lasers. Lamps and Lighting, 2022, 164(2), 71(in Chinese)
[7]	Yang F. Research on electroabsorption modulated lasers. ME Dissertation, Huazhong University of Science and Technology, 2021 (in Chinese)
[8]	Zhong M Y. Research on high-speed electro-absorption modulated wavelength-tunable lasers. ME Dissertation, Zhengzhou University of Light Industry, 2024 (in Chinese)
[9]	Shirao M, Sano H, Nakamura S, et al. A high performance EML TOSA employing FPC interface for 53 GBaud PAM4. 2018 IEEE International Semiconductor Laser Conference (ISLC). Santa Fe, NM, USA. IEEE, 2018, 1
[10]	Uchiyama A, Okuda S, Tsuji T, et al. Demonstration of 155 Gbaud PAM4 and PAM6 EML with narrow high-mesa EA modulator for 400 Gbps per Lane. TransmissionOptical Fiber Communication Conference (OFC) 2024. San Diego California. Optica Publishing Group, 2024, Tu2D. 1
[11]	Ohata N, Suzuki J, Uchiyama A, et al. A 224 Gb/s EML sub-assembly with electro optical bandwidth of 60 GHz for 800 GbE applications. IEEE Photonics Technol Lett, 2023, 35(4), 211 doi: 10.1109/LPT.2022.3233715
[12]	Shirao M, Okuda S, Uchiyama A, et al. 112 GBaud PAM-8 operation of 2-ch EML array on high-performance sub-mount. Next-Generation Optical Communication: Components, Sub-Systems, and Systems XIII, 2024
[13]	Uchiyama A, Okuda S, Hokama Y, et al. 225 Gb/s PAM4 2 km and 10 km transmission of electro-absorption modulator integrated laser with hybrid waveguide structure for 800 Gb/s and 1.6 Tb/s transceivers. J Light Technol, 2024, 42(4), 1225 doi: 10.1109/JLT.2023.3303884
[14]	Shinya O, Asami U, Toshiya T, et al. High-speed 340 Gbps PAM4 and 450 Gbps PAM6 operations of narrow high-mesa EML. 2025 Optical Fiber Communications Conference and Exhibition (OFC), 2025, Tu2J. 7
[15]	Shirao M, Fujita T, Uchiyama A, et al. A high-speed EML on sub-mount for 200 G PAM4. 2022 IEEE Photonics Conference (IPC), 2022, 1
[16]	Masahiro H, Akira T, Kan T, et al. 53Gbaud electro-absorption modulator integrated lasers for intra-data center networks. Sumitomo Electric Technical, 2023, 96, 20
[17]	Bhasker P, Arora S, Robertson A, et al. 200 G per lane uncooled CWDM hybrid CMBH-ridge electroabsorption modulated lasers for 2-km transmission. 2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, 1
[18]	Asakura H, Nishimura K, Yamauchi S, et al. 420 Gbps PAM8 operation using 93 GHz bandwidth lumped- electrode type EA-DFB laser at 50°c beyond 400 Gbps/lane. 2022 European Conference on Optical Communication (ECOC), 2022, 1
[19]	Yamauchi S, Adachi K, Asakura H, et al. 224-Gb/s PAM4 uncooled operation of lumped-electrode EA-DFB lasers with 2-km transmission for 800 GbE application. 2021 Optical Fiber Communications Conference and Exhibition (OFC), 2021, 1
[20]	Nishimura K, Asakura H, Yamauchi S, et al. 225-Gb/s PAM4 operation using lumped-electrode-type EA-DFB laser for 5- and 10-km transmission with low TDECQ. 2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, 1
[21]	Asakura H, Nishimura K, Yamauchi S, et al. 384-Gb/s/lane PAM8 operation using 76-GHz bandwidth EA-DFB laser at 50ºC with 1.0-Vpp swing over 2-km transmission. Optical Fiber Communication Conference (OFC) 2022, 2022, Th4C. 4
[22]	Shindo T, Fujiwara N, Kanazawa S, et al. High power and high speed SOA assisted extended reach EADFB laser (AXEL) for 53-Gbaud PAM4 fiber-amplifier-less 60-km optical link. J Light Technol, 2020, 38(11), 2984 doi: 10.1109/JLT.2020.2974511
[23]	Shindo T, Kanazawa S, Nakanishi Y, et al. High-output-power 1358-nm-wavelength SOA- integrated EADFB laser (AXEL) for 25-Gbit/s 100-km transmissions. J Light Technol, 2023, 41(9), 2815
[24]	Kobayashi W, Kanazawa S, Shindo T, et al. 128 Gbit/s operation of AXEL with energy efficiency of 1.5 pJ/bit for optical interconnection. IEICE Trans Electron, 2023, E106.C(11), 732 doi: 10.1587/transele.2022OCI0002
[25]	Kanazawa S, Shindo T, Chen M C, et al. 224-Gbit/s 4-PAM operation of compact DC block circuit integrated hi-FIT AXEL transmitter with low power consumption. J Light Technol, 2023, 41(10), 3131 doi: 10.1109/JLT.2023.3242371
[26]	Taniguchi H, Nakamura M, Hamaoka F, et al. 1.6-Tb/s 10-km transmission in O-band using 400-Gb/s/lane SDM channels enhanced by trellis path-limitation MLSE. J Light Technol, 2024, 42(12), 4338 doi: 10.1109/JLT.2024.3407973
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Received: 11 May 2025 Revised: 22 May 2025 Online: Accepted Manuscript: 15 June 2025

Article Navigation > Journal of Semiconductors > 2025 > Accepted Manuscript

Zhenyao Li, Chen Lyu, Xuliang Zhou, Mengqi Wang, Haotian Qiu, Yejin Zhang, Hongyan Yu, Jiaoqing Pan. High-speed electro-absorption modulated laser[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25030015 ****Z Y Li, C Lyu, X L Zhou, M Q Wang, H T Qiu, Y J Zhang, H Y Yu, and J Q Pan, High-speed electro-absorption modulated laser[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25030015

Citation:

Zhenyao Li, Chen Lyu, Xuliang Zhou, Mengqi Wang, Haotian Qiu, Yejin Zhang, Hongyan Yu, Jiaoqing Pan. High-speed electro-absorption modulated laser[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25030015 ****

Z Y Li, C Lyu, X L Zhou, M Q Wang, H T Qiu, Y J Zhang, H Y Yu, and J Q Pan, High-speed electro-absorption modulated laser[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25030015

Citation:

Z Y Li, C Lyu, X L Zhou, M Q Wang, H T Qiu, Y J Zhang, H Y Yu, and J Q Pan, High-speed electro-absorption modulated laser[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25030015

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High-speed electro-absorption modulated laser

DOI: 10.1088/1674-4926/25030015

CSTR: 32376.14.1674-4926.25030015

Zhenyao Li^{1, 2},
Chen Lyu^{1, 2},
Xuliang Zhou^{1, 2},
Mengqi Wang^{1, 2},
Haotian Qiu^{1, 2},
Yejin Zhang^{1, 2},
Hongyan Yu^{1, 2,},
Jiaoqing Pan^{1, 2,}

1.
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

More Information

Zhenyao Li got his bachelor's degree from Nankai University in China, and master's degree from Institute of Semiconductors, Chinese Academy of Sciences in China. Now, he is a Ph.D. student supervised by Prof. Jiaoqing Pan in the Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences. His current research focuses on High-Speed Electro-absorption Modulated Laser
Hongyan Yu got her M. E. degree in microelectronics and solid state electronics from the Shandong University in 2011. Since 2011 she has been with the key laboratory of semiconductor materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, as a research associate, where she worked on hybrid InGaAsP/Si evanescent lasers and widely tunable long wavelength DBR lasers for gas detection
Jiaoqing Pan got his bachelor's degree, master's degree and doctor's degree from Shandong University in 1997, 2000 and 2003 respectively. Since 2011 he has been with the key laboratory of semiconductor materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, as a Full Professor. His research interests are silicon-based Laser Radar chips, Ⅲ-Ⅴ group high-speed modulated lasers and monolithic integrated information optoelectronic chips
Corresponding author: jqpan@semi.ac.cn; hyyu09@semi.ac.cn
Received Date: 2025-05-11
Revised Date: 2025-05-22

Available Online: 2025-06-15

Abstract

Abstract

Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.
- electro-absorption modulation,
- high-speed laser,
- modulation bandwidth,
- data transmission rate

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