Quantum light sources serve as one of the key elements in quantum photonic technologies. Such sources made from semiconductors material, e.g., quantum dots (QDs), are particularly appealing because of their great potential of scalability enabled by the modern planar nanofabrication technologies. So far, non-classic light sources based on semiconductor QDs are currently outperforming their counterparts using nonlinear optical process, for instance, parametric down conversion and four-wave mixing. To fully exploring the potential of semiconductor QDs, it is highly desirable to integrate QDs with a variety of photonic nanostructures for better device performance due to the improved light-matter interaction. Among different designs, the photonic nanostructures exhibiting broad operation spectral range is particularly interesting to overcome the QD spectral inhomogeneity and exciton fine structure splitting for the generations of single-photon and entangled photon pair respectively. In this review, we focus on recent progress on high-performance semiconductor quantum light sources that achieved by integrating single QDs with a variety of broadband photonic nanostructures i.e. waveguide, lens and low-Q cavity.

Due to the remarkable growth rate compared to another growth methods for Gallium nitride (GaN) growth, Hydride vapor phase epitaxy (HVPE) is now the only method for mass product GaN substrates. In this review, commercial HVPE systems and the GaN crystals grown by them are demonstrated. This article also illustrates some innovative attempts to develop homebuilt HVPE systems. Finally, the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.

Single photon sources are key components for quantum technologies such as quantum communication, computing and metrology. A key challenge towards the realization of global quantum networks are transmission losses in optical fibers. Therefore, single photon sources are required to emit at the low-loss telecom wavelength bands. However, an ideal telecom wavelength single photon source has yet to be discovered. Here, we review the recent progress in realizing such sources. We start with single photon emission based on atomic ensembles and spontaneous parametric down conversion, and then focus on solid-state emitters including semiconductor quantum dots, defects in silicon carbide and carbon nanotubes. In conclusion, some state-of-the-art applications are highlighted.

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector (QWIP) with tunnel compensation structure, an improved structure is proposed. In the new structure, the superlattices are located between the tunnel junction and the barrier as the infrared absorption region, eliminating the effect of doping concentration on the well width in the original structure. Theoretical analysis and experimental verification of the new structure are carried out. The experimental sample is a two-cycle device, each cycle contains a tunnel junction, a superlattice infrared absorption region and a thick barrier. The photosurface of the detector is 200 × 200 μm² and the light is optically coupled by 45° oblique incidence. The results show that the optimal operating voltage of the sample is –1.1 V, the dark current is 2.99 × 10^–8 A, and the blackbody detectivity is 1.352 × 10⁸ cm·Hz^1/2·W^–1 at 77 K. Our experiments show that the new structure can work normally.

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compound semiconductors (i.e., (B, Al, Ga)N) as the deep-ultraviolet materials of interest, and two-dimensional materials, namely graphene, two-dimensional boron nitride, and two-dimensional transition metal dichalcogenides, along with gallium oxide, as the hybrid integrated materials. We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices. In this article we provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates. A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.

The intrinsic characteristics of single photons became critical issues since the early development of quantum mechanics. Nowadays, acting as flying qubits, single photons are shown to play important roles in the quantum key distribution and quantum networks. Many different single photon sources (SPSs) have been developed. Point defects in silicon carbide (SiC) have been shown to be promising SPS candidates in the telecom range. In this work, we demonstrate a stable SPS in an epitaxial 3C-SiC with the wavelength in the near C-band range, which is very suitable for fiber communications. The observed SPSs show high single photon purity and stable fluorescence at even above 400 K. The lifetimes of the SPSs are found to be almost linearly decreased with the increase of temperature. Since the epitaxial 3C-SiC can be conveniently nanofabricated, these stable near C-band SPSs would find important applications in the integrated photonic devices.

This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition. The substrate with concave cones was fabricated by nano-imprint lithography and wet etching. Two samples with different epitaxy procedures were fabricated, manifesting as two-dimensional growth mode and three-dimensional growth mode, respectively. The results showed that growth temperature deeply influenced the growth modes and thus played a critical role in the coalescence of AlN. At a relatively high temperature, the AlN epilayer was progressively coalescence and the growth mode was two-dimensional. In this case, we found that the inclined semi-polar facets arising in the process of coalescence were \begin{document}$\left\{ {11\bar 21} \right\}$\end{document} type. But when decreasing the temperature, the \begin{document}$\left\{ {11\bar 22} \right\}$\end{document} semi-polar facets arose, leading to inverse pyramid morphology and obtaining the three-dimensional growth mode. The 3D inverse pyramid AlN structure could be used for realizing 3D semi-polar UV-LED or facet-controlled epitaxial lateral overgrowth of AlN.

In this paper, an ultraviolet C-band laser diode lasing at 277 nm composed of B_0.313Ga_0.687N/B_0.40Ga_0.60N QW/QB heterostructure on Mg and Si-doped Al_xGa_1–xN layers was designed, as well as a lowest reported substitutional accepter and donor concentration up to N_A = 5.0 × 10¹⁷ cm^–3 and N_D = 9.0 × 10¹⁶ cm^–3 for deep ultraviolet lasing was achieved. The structure was assumed to be grown over bulk AlN substrate and operate under a continuous wave at room temperature. Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region, there is still a shortage of investigation about the ternary BGaN in aluminum-rich AlGaN alloys. Based on the simulation, an average local gain in quantum wells of 1946 cm^–1, the maximum emitted power of 2.4 W, the threshold current of 500 mA, a slope efficiency of 1.91 W/A as well as an average DC resistance for the V–I curve of (0.336 Ω) had been observed. Along with an investigation regarding different EBL, designs were included with tapered and inverse tapered structure. Therefore, it had been found a good agreement with the published results for tapered EBL design, with an overweighting for a proposed inverse tapered EBL design.

A study has just been carried out on hot electron effects in GaAs/Al_0.3Ga_0.7As potential well barrier (PWB) diodes using both Monte Carlo (MC) and drift-diffusion (DD) models of charge transport. We show the operation and behaviour of the diode in terms of electric field, mean electron velocity and potential, mean energy of electrons and Γ-valley population. The MC model predicts lower currents flowing through the diode due to back scattering at anode (collector) and carrier heating at higher bias. At a bias of 1.0 V, the current density obtained from experimental result, MC and DD simulation models are 1.35, 1.12 and 1.77 μA/μm³ respectively. The reduction in current over conventional model, is compensated to a certain extent because less charge settles in the potential well and so the barrier is slightly reduced. The DD model results in higher currents under the same bias and conditions. However, at very low bias specifically, up to 0.3 V without any carrier heating effects, the DD and MC models look pretty similar as experimental results. The significant differences observed in the I–V characteristics of the DD and MC models at higher biases confirm the importance of energy transport when considering these devices.

Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition (PLD). An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency (RF) power on growth rate was investigated. A film grown with plasma assistance showed 2.7 times faster growth rate. X-ray diffraction (XRD) and Raman spectroscopy analysis showed β-Ga₂O₃ films grown with plasma assistance at 500 °C. The roughness of the films decreased when the RF power of plasma treatment increased. Transmittance of these films was at least 80% and showed sharp absorption edge at 250 nm which was consistent with data previously reported.

Reliability issues of flash memory are becoming increasingly significant with the shrinking of technology nodes. Among them, erase time degradation is an issue that draws the attention of academic and industry researchers. In this paper, causes of the " erase time degradation” are exhaustively analyzed, with proposals for its improvement presented, including a low stress program/erase scheme with a staircase pulse and disturb-immune array bias condition. Implementation of the optimized circuit structure is verified in a 128 Mb SPI NOR Flash memory chip, which is fabricated on a SMIC 65 nm ETOX process platform. Testing results indicate a degradation of the sector erase time from 10.67 to 104.9 ms after 10⁵ program/erase cycles, which exhibits an improvement of approximately 100 ms over conventional schemes.