Triboelectric nanogenerator (TENG) utilizing tribovoltaic effect can directly produce direct current with high energy conversion efficiency, which expands their application in semiconductor devices and self-powered systems. This work comprehensively summarizes the recent developments in semiconductor-based direct current TENGs (SDC-TENGs), which hold significant promise for DC energy harvesting technologies and semiconductor systems. First, the tribovoltaic effect is elucidated, and SDC-TENGs are categorized into six types based on different triboelectric structures: metal-semiconductor (M-S), metal-insulator-semiconductor (M-I-S), semiconductor-semiconductor (S-S), semiconductor-insulator-semiconductor (S-I-S), liquid-semiconductor (L-S), and metal/semiconductor-liquid-semiconductor (M/S-L-S) contact devices. Subsequent sections detail the operational mechanisms, strengths, and limitations of each category. Additionally, this paper outlines the enhancement mechanisms of SDC-TENGs providing guidance and recommendations for performance improvement. The conclusion highlights potential application scenarios for various types of SDC-TENGs, outlining the prospective benefits and challenges. SDC-TENG technology is poised to drive revolutionary developments in semiconductor devices and self-powered systems.

Infrared optoelectronic sensing is the core of many critical applications such as night vision, health and medication, military, space exploration, etc. Further including mechanical flexibility as a new dimension enables novel features of adaptability and conformability, promising for developing next−generation optoelectronic sensory applications toward reduced size, weight, price, power consumption, and enhanced performance (SWaP³). However, in this emerging research frontier, challenges persist in simultaneously achieving high infrared response and good mechanical deformability in devices and integrated systems. Therefore, we perform a comprehensive review of the design strategies and insights of flexible infrared optoelectronic sensors, including the fundamentals of infrared photodetectors, selection of materials and device architectures, fabrication techniques and design strategies, and the discussion of architectural and functional integration towards applications in wearable optoelectronics and advanced image sensing. Finally, this article offers insights into future directions to practically realize the ultra−high performance and smart sensors enabled by infrared−sensitive materials, covering challenges in materials development and device micro−/nanofabrication. Benchmarks for scaling these techniques across fabrication, performance, and integration are presented, alongside perspectives on potential applications in medication and health, biomimetic vision, and neuromorphic sensory systems, etc.

Heart rate variability (HRV) that can reflect the dynamic balance between the sympathetic nervous and parasympathetic nervous of human autonomic nervous system (ANS) has attracted considerable attention. However, traditional electrocardiogram (ECG) devices for HRV analysis are bulky, and hard wires are needed to attach measuring electrodes to the chest, resulting in the poor wearable experience during the long-term measurement. Compared with that, wearable electronics enabling continuously cardiac signals monitoring and HRV assessment provide a desirable and promising approach for helping subjects determine sleeping issues, cardiovascular diseases, or other threats to physical and mental well-being. Until now, significant progress and advances have been achieved in wearable electronics for HRV monitoring and applications for predicting human physical and mental well-being. In this review, the latest progress in the integration of wearable electronics and HRV analysis as well as practical applications in assessment of human physical and mental health are included. The commonly used methods and physiological signals for HRV analysis are briefly summarized. Furthermore, we highlighted the research on wearable electronics concerning HRV assessment and diverse applications such as stress estimation, drowsiness detection, etc. Lastly, the current limitations of the integrated wearable HRV system are concluded, and possible solutions in such a research direction are outlined.

Human skin, through its complex mechanoreceptor system, possesses the exceptional ability to finely perceive and differentiate multimodal mechanical stimuli, forming the biological foundation for dexterous manipulation, environmental exploration, and tactile perception. Tactile sensors that emulate this sensory capability, particularly in the detection, decoupling, and application of normal and shear forces, have made significant strides in recent years. This review comprehensively examines the latest research advancements in tactile sensors for normal and shear force sensing, delving into the design and decoupling methods of multi-unit structures, multilayer encapsulation structures, and bionic structures. It analyzes the advantages and disadvantages of various sensing principles, including piezoresistive, capacitive, and self-powered mechanisms, and evaluates their application potential in health monitoring, robotics, wearable devices, smart prosthetics, and human-machine interaction. By systematically summarizing current research progress and technical challenges, this review aims to provide forward-looking insights into future research directions, driving the development of electronic skin technology to ultimately achieve tactile perception capabilities comparable to human skin.

Flexible photodetectors have garnered significant attention by virtue of their potential applications in environmental monitoring, wearable healthcare, imaging sensing, and portable optical communications. Perovskites stand out as particularly promising materials for photodetectors, offering exceptional optoelectronic properties, tunable band gaps, low-temperature solution processing, and notable mechanical flexibility. In this review, we explore the latest progress in flexible perovskite photodetectors, emphasizing the strategies developed for photoactive materials and device structures to enhance optoelectronic performance and stability. Additionally, we discuss typical applications of these devices and offer insights into future directions and potential applications.

Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_B in conventional devices. This results in a reduction of the trade-off relationship between specific on-resistance R_on,sp and V_B from the conventional R_on,sp∝V_B^2.5 to R_on,sp∝W∙V_B^1.32, and even to R_on,sp∝W·V_B^1.03. As the exponential term coefficient decreases, R_on,sp decreases with the cell width W, exhibiting a development pattern reminiscent of "Moore’s Law". This paper provides an overview of the latest research developments in SJ power semiconductor devices. Firstly, it introduces the minimum specific on-resistance R_on,min theory of SJ devices, along with its combination with special effects like 3-D depletion and tunneling, discussing the development of R_on,min theory in the wide bandgap SJ field. Subsequently, it discusses the latest advancements in silicon-based and wide bandgap SJ power devices. Finally, it introduces the homogenization field (HOF) and high-K voltage-sustaining layers derived from the concept of SJ charge balance. SJ has made significant progress in device performance, reliability, and integration, and in the future, it will continue to evolve through deeper integration with different materials, processes, and packaging technologies, enhancing the overall performance of semiconductor power devices.

Perovskites dominate the photovoltaic research community over the last two decades due to its very high absorption coefficient, electron and hole mobility. However, most of the reported solar cells constitute organic perovskites which offer very high efficiency but are highly unstable. Chalcogenide perovskites like BaZrS₃, CaZrS₃, etc. promise to be a perfect alternate owing to its high stability and mobilities. But, till now no stable photovoltaic device has been successfully fabricated using these materials and the existing challenges present in the synthesis of such perovskites are discussed. Also, the basic thermodynamic aspects that are essential for formation of BaZrS₃ are discussed. An extensive review on the precedent literatures and the future direction in the BaZrS₃ photovoltaic device research is clearly given.

In recent years, propelled by the rapid iterative advancements in digital imaging technology and the semiconductor industry, encompassing microelectronic design, manufacturing, packaging, and testing, time-of-flight (ToF)-based imaging systems for acquiring depth information have garnered considerable attention from both academia and industry. This technology has emerged as a focal point of research within the realm of 3D imaging. Owing to its relatively straightforward principles and exceptional performance, ToF technology finds extensive applications across various domains including human−computer interaction, autonomous driving, industrial inspection, medical and healthcare, augmented reality, smart homes, and 3D reconstruction, among others. Notably, the increasing maturity of ToF-based LiDAR systems is evident in current developments. This paper comprehensively reviews the fundamental principles of ToF technology and LiDAR systems, alongside recent research advancements. It elucidates the innovative aspects and technical challenges encountered in both transmitter (TX) and receiver (RX), providing detailed discussions on corresponding solutions. Furthermore, the paper explores prospective avenues for future research, offering valuable insights for subsequent investigations.

Electron spins confined in semiconductor quantum dots (QDs) are one of potential candidates for physical implementation of scalable quantum information processing technologies. Tunnel coupling based inter exchange interaction between QDs is crucial in achieving single-qubit manipulation, two-qubit gate, quantum communication and quantum simulation. This review first provides a theoretical perspective that surveys a general framework, including the Helter−London approach, the Hund−Mulliken approach, and the Hubbard model, to describe the inter exchange interactions between semiconductor quantum dots. An electrical method to control the inter exchange interaction in a realistic device is proposed as well. Then the significant achievements of inter exchange interaction in manipulating single qubits, achieving two-qubit gates, performing quantum communication and quantum simulation are reviewed. The last part is a summary of this review.

One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.