Inorganic cesium lead iodide (CsPbI₃) perovskites are promising photovoltaic materials owing to their excellent thermal stability and optoelectronic properties. However, CsPbI₃ film fabricated via solution processing typically suffers from high defect densities and detrimental residual tensile stress due to uncontrolled crystallization and thermal expansion mismatch with the substrate, which impedes its practical application. Herein, we introduce ammonium benzenesulfonate (ABS) as a bifunctional additive to modulate crystallization, thereby passivating defects and regulating residual stress. The sulfonate group of ABS coordinates with undercoordinated Pb²⁺ ions, while its ammonium group forms hydrogen bonds with iodide ions. The molecular structure of ABS bridges adjacent [PbI₆]⁴⁻ octahedra at grain boundaries. This dual interaction effectively enhanced crystallinity, suppressed non-radiative recombination, and improved structural stability. As a result, ABS-modified CsPbI₃-based perovskite solar cells achieve an impressive power conversion efficiency (PCE) of 21.21% under standard illumination. Remarkably, they deliver a PCE of 40.85% under indoor lighting conditions. Moreover, unencapsulated devices retains 91% of their initial PCE after 800 hours of storage in ambient air at a relative humidity of 5%.

Fluorescence temperature sensing technology has become a research direction in the field of temperature measurement with its significant advantages of non-contact measurement, high spatial resolution, fast response and anti-electromagnetic interference. Although the double rare earth ion doping ratio fluorescent temperature sensing materials have made significant progress, the thermal quenching phenomenon is still the key bottleneck restricting its performance improvement. In this study, we propose to construct a flexible Sc₂Mo₃O₁₂:Eu³⁺/Tb³⁺ film with negative thermal expansion characteristics, and systematically study its visual temperature sensing characteristics. The negative thermal expansion characteristics of Sc₂Mo₃O₁₂ matrix effectively inhibited the thermal quenching rate of Tb³⁺ luminescence, and enhanced the thermal enhanced luminescence effect of Eu³⁺. This two-way regulation mechanism improves the intensity comparison of the two light-emitting channels, and provides an innovative strategy for improving the sensitivity of temperature sensing. The flexible film based on Eu³⁺/Tb³⁺ codoped system realizes intuitive temperature perception through the significant change of fluorescent color, and can complete the temperature interpretation without complex spectral equipment. This greatly expands its application prospect in the field of rapid field detection and real-time monitoring, and shows its broad potential in the fields of wearable devices, biomedical diagnosis, and real-time monitoring of surface temperature field.

AlN/GaN high-electron-mobility transistor (HEMT) equipped with ultra-thin AlN barrier epitaxial structures were grown on 6-inch and 8-inch Si-based GaN templates via plasma-assisted molecular beam epitaxy (PAMBE). The AlN barrier thickness was systematically optimized to improve the properties of two-dimensional electron gas (2DEG). Structural and electrical characterizations were performed by atomic force microscopy (AFM), transmission electron microscopy (TEM), contact and non-contact Hall measurements. At an optimal AlN barrier thickness, an extremely low sheet resistance of 159.9 Ω/□ by contact Hall and 143.8 Ω/□ by non-contact Hall was achieved on the 6-inch HEMT wafer, marking a significant improvement over state-of-the-art Si-based GaN HEMTs. The epitaxial surface exhibited excellent morphology with a root-mean-square (RMS) roughness of 0.45 nm. Moreover, cross-sectional TEM analysis of PAMBE-grown AlN/GaN HEMT revealed an atomically sharp and structurally coherent heterointerface, whch is critical for achieving high electron mobility and reduced scattering loss. In addition, the 8-inch HEMT demonstrated a sheet resistance (R_s) as low as 115 Ω/□ by non-contact Hall with a uniformity is 2.13%, outperforming competing technologies than other companies on the market.

Broadband, low-power, and solution-processable organic photodetectors are essential for next-generation optoelectronic sensing. Two-dimensional conductive metal-organic frameworks (2D cMOFs) based on zinc tetracarboxyphenyl porphyrin (Zn-TCPP) offer strong light absorption and efficient charge transport, yet their photoresponse remains confined to the UV−visible region. To address this limitation, this study develops a solution-compatible strategy for constructing a well-defined MOF/organic semiconductor type-II heterojunction by spin-coating a high-performance Y6 layer onto Zn-TCPP films. The resulting heterostructure provides complementary spectral absorption, promotes efficient exciton dissociation, and enables directional charge carrier transport, thereby achieving self-powered broadband photodetection spanning the ultraviolet to near-infrared (UV−NIR) range. The device demonstrates outstanding performance, including an ultra-low dark current (down to 3.40 × 10⁻¹³ A), high responsivity, and an ultrafast transient response with a rise time of 4.4 ms. This work establishes a generalizable approach for engineering high-efficiency MOF/organic semiconductor heterojunctions and offers a promising platform for low-cost, broadband, and self-powered photodetectors for biomedical and advanced sensing applications.