Qian Xu, Jie Qiu, Mengyang Liu, Dongzi Yang, Tingpan Lan, Jie Cao, Yingfen Wei, Hao Jiang, Ming Wang. Back-gate-tuned organic electrochemical transistor with temporal dynamic modulation for reservoir computing[J]. Journal of Semiconductors, 2025, 47(0): -1. doi: 10.1088/1674-4926/25090001.
Q Xu, J Qiu, M Y Liu, D Z Yang, T P Lan, J Cao, Y F Wei, H Jiang, and M Wang, Back-gate-tuned organic electrochemical transistor with temporal dynamic modulation for reservoir computing[J]. J. Semicond., 2025, accepted. doi: 10.1088/1674-4926/25090001.Export: BibTex EndNote
Organic electrochemical transistor (OECT) devices demonstrate great promising potential for reservoir computing (RC) systems, but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks. In this study, we report an OECT-based neuromorphic device with tunable relaxation time (τ) by introducing an additional vertical back-gate electrode into a planar structure. The dual-gate design enables τ reconfiguration from 93 to 541 ms. The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gate-induced electrostatic coupling, as verified by electrochemical impedance spectroscopy analysis. Furthermore, we used the τ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction, achieving a significant improvement in prediction accuracy from below 69% to 99%. The results demonstrate that the τ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.
Organic electrochemical transistor (OECT) devices demonstrate great promising potential for reservoir computing (RC) systems, but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks. In this study, we report an OECT-based neuromorphic device with tunable relaxation time (τ) by introducing an additional vertical back-gate electrode into a planar structure. The dual-gate design enables τ reconfiguration from 93 to 541 ms. The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gate-induced electrostatic coupling, as verified by electrochemical impedance spectroscopy analysis. Furthermore, we used the τ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction, achieving a significant improvement in prediction accuracy from below 69% to 99%. The results demonstrate that the τ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.
Q Xu, J Qiu, M Y Liu, D Z Yang, T P Lan, J Cao, Y F Wei, H Jiang, and M Wang, Back-gate-tuned organic electrochemical transistor with temporal dynamic modulation for reservoir computing[J]. J. Semicond., 2025, accepted. doi: 10.1088/1674-4926/25090001.
