Fig. 1.
(Color online) The schematic diagram of the 850 nm VCSEL.
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Journal of Semiconductors
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2025
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| Citation: |
Si-Cong Tian. High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25090008
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S C Tian, High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25090008
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High-speed single-mode 850 nm vertical-cavity surface-emitting laser
DOI: 10.1088/1674-4926/25090008
CSTR: 32376.14.1674-4926.25090008
More Information-
Professor Si-Cong Tian received his B. Sc. and Ph. D. degrees in Physics from Jilin University, China, in 2007 and 2012, respectively. From 2016−2017 he studied at Arkansas University, US, as a visiting scholar. Currently, he is a Professor at Bimberg Chinese−German Center for Green Photonics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, China. His research interests include high-speed vertical-cavity surface-emitting lasers and high-brightness semiconductor lasers - Corresponding author: tiansicong@ciomp.ac.cn
- Revised Date: 2025-09-15 Available Online: 2025-09-29
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Abstract
A high-speed single-mode vertical-cavity surface-emitting laser (VCSEL) is one of the most important light sources for optical interconnects in data centers. Single-mode VCSEL can improve the transmission distance. In this letter, we demonstrate a single-mode 850nm VCSEL with a bit rate of 60 Gb/s under NRZ modulation and 104 Gb/s under PAM4 modulation across a 100 m length of OM5 fiber, without the need for equalization or a filter. In addition, by using optical injection locking, the 3dB bandwidth is enhanced to 68.5 GHz. -
References
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