Fig. 1.
(Color online) (a) Cross-sectional schematic diagram of quasi-vertical SBDs with p-GaN sidewall. (b) Main fabrication steps for quasi-vertical SBDs with p-GaN sidewall.
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Journal of Semiconductors
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2026
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| Citation: |
Yinhe Wu, Haoyin Ke, Yu Fang, Chenjun Xu, Xiufeng Song, Teng Jiang, Weihang Zhang, Shenglei Zhao, Yue Hao, Jincheng Zhang. High-performance quasi-vertical GaN Schottky barrier diodes with regrown p-GaN sidewall[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26050015
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Y H Wu, H Y Ke, Y Fang, C J Xu, X F Song, T Jiang, W H Zhang, S L Zhao, Y Hao, and J C Zhang, High-performance quasi-vertical GaN Schottky barrier diodes with regrown p-GaN sidewall[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26050015
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High-performance quasi-vertical GaN Schottky barrier diodes with regrown p-GaN sidewall
DOI: 10.1088/1674-4926/26050015
CSTR: 32376.14.1674-4926.26050015
More Information-
Yinhe Wu was born in Yuncheng, Shanxi, China, in 1991. He received the Ph.D. degree in engineering from Xidian University, Xi’an, China, in 2022. He is currently an Associate Professor with the Guangzhou Institute of Technology, Xidian University, Guangzhou, China. His research interests mainly focus on wide bandgap (WBG) semiconductor power devices and integrated circuit design -
Shenglei Zhao received the Ph.D. degree from Xidian University, Xi'an, China, in 2015. He is currently a Professor at the School of Microelectronics, Xidian University. His research interests include lateral GaN HEMTs, vertical GaN power devices, and GaN device reliability - Corresponding author: S. Zhao, Email: slzhao@xidian.edu.cn
- Revised Date: 2026-06-25 Available Online: 2026-07-24
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Abstract
This work demonstrates high-performance quasi-vertical GaN Schottky barrier diodes (SBDs) on sapphire substrates utilizing a regrown p-GaN sidewall structure. The regrown p-GaN sidewall alleviates electric-field crowding at the Schottky-contact edge and suppresses sidewall-associated reverse leakage, leading to a dramatic enhancement in breakdown voltage (BV) from 71 to 847 V. Furthermore, the reverse leakage current density is suppressed by five orders of magnitude, decreasing from 0.29 to 5.2 × 10−6 A/cm2 at a cathode bias of −50 V. Two-dimensional TCAD simulations were performed to verify the field-modulation effect of the p-GaN sidewall. The quasi-vertical SBDs with p-GaN sidewall demonstrate robust stability under both thermal and reverse-bias stress, highlighting the potential of regrown sidewall architectures for the next generation of GaN-on-sapphire power electronics.-
Keywords:
- GaN,
- Quasi-vertical SBDs,
- p-GaN sidewall,
- breakdown voltage
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References
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