A Ku Band 30W Pulsed Microwave Power Amplifier Module

  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

Key words: Ku bandmicrowave power amplifiermodulepulse mode

Abstract: This paper reports the design and performance of a pulsed microwave power amplifier module that uses microstrip lines and five-stage solid-state devices.A novel two-layer chamber structure is designed for the cancellation of crosstalk between low-frequency circuits and high-frequency circuits.A two-section bias circuit for the GaAs internally matched MESFETs is presented,with which the low-frequency oscillations can be suppressed effectively.When operating over 13.5~14.0GHz at a duty cycle of 10% with 3kHz pulse repetition frequency,the power amplifier module shows a power gain of Gp≥44dB,an output pulsed peak power of Ppk≥30W,and a total efficiency of η≥13% (class A power amplification).

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