New Modeling and Optimization Method Suitable for UDSM Lithography Simulation

  • Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China
  • Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China
  • Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China
  • Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China

Key words: lithography modelinglayout contourcircular samplinggenetic algorithmoptical proximity correction

Abstract: This paper presents a novel UDSM lithography process modeling flow using layout contours.The flow mainly includes the following steps:First the transmission cross coefficient matrix standing for the pure optical lithography model is transformed into a much smaller one by circular sampling,while the mask is represented by the same sampling basis;then the resulting system is calibrated half-empirically with the results of a rigorous 3D simulation of the target design layout or the SEM contours.During the model calibration process,novel genetic algorithms are introduced.The experimental results show that the method takes into account new aberration effects,which cannot be simulated well by the traditional method in the UDSM nodes.Due to the fact that the final model is represented using a series of convolution kernels,the constructed model is able to satisfy the speed and accuracy demands of optical proximity correction tasks.

    HTML

Relative (20)

Journal of Semiconductors © 2017 All Rights Reserved