Improvements on High Current Performance of StaticInduction Transistor

  • School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China
  • School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China
  • School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China
  • School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China

Key words: static induction transistorgate efficiencyintrinsic static gainsensitivity factor

Abstract: Methods for improving the high current performance of static induction transistor (SIT) are presented.Many important factors,such as "trans-conductance per unit channel width" θ, "gate efficiency" η, "sensitivity factor" D,and "intrinsic static gain" μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth.

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