Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Key words: vertical-cavity surface-emitting laserwafer-direct bondingtunnel junction

Abstract: We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) that consisted of an InP-based active layer with InAsP/InGaAsP strain-compensated multi-quantum wells,SiO2/TiO2 dielectric film,and GaAs/AlAs semiconductor distributed Bragg reflectors (DBRs).The InP-based active layers and GaAs-based DBRs were integrated using wafer-direct bonding techniques.Then,devices were successfully fabricated upon related device processing such as current-aperture definition using wet-etching undercut techniques and deposition of dielectric DBR,etc.The threshold current of the VCSEL is 13.5mA and the wavelength of the single mode is 1288.6nm.

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