## Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS

• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China

Abstract: A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed.The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance.The output characteristics become better as the drain-substrate parasitic capacitance decreases.Results show that the drain-substrate capacitance of the n-buried-pSOI sandwiched LDMOS is 46.6% less than that of the normal LDMOS,and 11.5% less than that of the n-buried-pSOI LDMOS,respectively.At 1dB compression point,its output power is 188% higher than that of the normal LDMOS,and 10.6% higher than that of the n-buried-pSOI LDMOS,respectively. The power-added efficiency of the proposed structure is 38.3%.The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS.

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