Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs

  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

Key words: PDSOI SRAM total dose radiation

Abstract: The first domestic 1e6rad(Si) total dose hardened 1.2μm partially depleted silicon-on-insulator (PDSOI) 64k SRAM fabricated in SIMOX is demonstrated.The address access time is independent of temperature from -55 to 125℃ and independent of radiation up to 1e6rad(Si) for the supply voltage VDD.The standby current is 0.65μA before the total dose of radiation and is only 0.80mA after radiation exposure,which is much better than the specified 10mA.The operating power supply current is 33.0mA before and only 38.1mA afterward,which is much better than the specified 100mA.

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