Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
  • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

Key words: photo-detectoroptoelectronic integrated receiverCMOSactive inductor

Abstract: A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=1e-12.

    HTML

Relative (20)

Journal of Semiconductors © 2017 All Rights Reserved