## Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure

• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
• State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

Abstract: The results of an experiment on REBULF LDMOS are analyzed.The increased leakage current is due to the n+-floating layer,as proved by the test results of breakdown voltage.However,the breakdown voltage decreases as a result of the leakage current of the n+p junction being exposed to the surface.In order to resolve this problem,a REBULF LDMOS with a partial n+-floating layer is proposed for the first time.An effective REBULF is obtained using this structure,and the large leakage current of Ref.［10］ is eliminated by an inner n+p junction around the source.The results show that the breakdown voltage is increased by 60% in comparison with traditional RESURF LDMOS.

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