Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane

  • National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China
  • National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China
  • National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China
  • National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China
  • National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China

Key words: nano electro-mechanical systemmechanical-electrical coupling uniaxial pressure double-barrier quantum well

Abstract: An AlAs/GaAs superlattice quantum well membrane is grown by MBE on (001)-oriented GaAs substrates.A mechanical-electrical coupling experiment on this membrane under (110) and (110) uniaxial pressure is conducted,and the pressure-dependent current-voltage characteristics are tested.Under (110) stress,the resonance peaks shift to more positive voltages,while under (110) stress,the peaks shift toward more negative voltages.The mechanism that induces this phenomenon is discussed.The result agrees well with that of the Meso-piezoresistive theory.

    HTML

Relative (20)

Journal of Semiconductors © 2017 All Rights Reserved