An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band

  • School of Information Science and Engineering,Shandong University,Jinan 250100,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • School of Information Science and Engineering,Shandong University,Jinan 250100,China
  • School of Information Science and Engineering,Shandong University,Jinan 250100,China

Key words: InGaP/GaAs HBTpower combiningMICpower amplifiers

Abstract: A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band.A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit.A compact microstripe line parallel matching network is used to divide and combine the power.By biasing the amplifier at class AB:Vcc=7V,Ic=230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8.1GHz.

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