Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide

  • Department of Physics,Nanchang University,Nanchang 330031,China
  • College of Optics and Electronic Information Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • College of Optics and Electronic Information Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • Department of Physics,Nanchang University,Nanchang 330031,China
  • Department of Material Chemical Engineering,Tokyo Hosei University,Tokyo 184-8584,Japan
  • Department of Chemical Engineering,Tokyo University of Agriculture and Technology,Tokyo 184-8588,Japan

Key words: amorphous chalcogenide semiconductorAs2S8 film waveguidethermal machining effectoptical transmission

Abstract: Amorphous semiconductor As2S8 film is shown to undergo structural transformations under thermal machining.Increases in the refractive index and density are found through the application of a prism coupler and Raman spectra.The experimental results demonstrate that the no-full reversible photorefractive phenomenon in the as-deposited and well-illuminated As2S8 film until the annealing temperature reaches 160℃ is found,and depends on the annealing temperature.The full reversible photorefractive phenomenon is observed in annealed As2S8 film after annealing under the glass transition temperature of 130℃.An optical transmission experiment shows that the transmission loss of an amorphous semiconductor As2S8 film after annealing decreases by about 4dB/cm.

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