Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells

  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China
  • Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,China
  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China
  • Depart of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430073,China
  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China
  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China
  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China
  • Key Laboratory of Material Physics,Department of Physics,Zhengzhou University, Zhengzhou 450052,China

Key words: boron-doped μc-Si:H filmsRaman crystallinitydark conductivitysolar cells

Abstract: Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films and solar cells are prepared by plasma enhanced chemical vapour deposition (PECVD).The effects of diborane concentration,thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated.With the optimum p-layer deposition parameters,a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers.In addition,the carriers transport mechanism of p-type μc-Si:H films is discussed.

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