Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation

  • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China
  • Graduate University of the Chinese Academy of Sciences,Beijing 100049,Chin
  • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China
  • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

Key words: plasma nitridationmobilityTDDB

Abstract: MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.

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