High-Brightness Tapered Diode Lasers Emitting at 980nm with Electrically Separated Ridge Waveguide and Tapered Section

  • National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Key words: tapered lasers980nmseparate contactingbeam propagation ratio光束质量因子

Abstract: High-brightness tapered diode lasers emitting at 980nm with electrically separated ridge waveguide and tapered section were fabricated.The output power of the tapered section increases with the increase of the ridge waveguide current.An output power of 4.28W,which is the maximum output power with common contacting,is achieved at IRW=150mA.The power-current characteristics remain linear within the studied current range.When the output power of the tapered lasers is 1W,the beam propagation ratio decreases from 3.79 with common contacting to 2.45 with separated contacting.

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