Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 620-625
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AlInAs氧化物限制1.3μm低阈值边发射激光器(英文)

刘志宏 , 王圩 , 王书荣 , 赵玲娟 , 朱洪亮 , 周帆 , 王鲁峰 and 丁颖

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Key words: AlInAs氧化物限制, 脊波导, 边发射, 激光器

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 620-625
      刘志宏, 王圩, 王书荣, 赵玲娟, 朱洪亮, 周帆, 王鲁峰, 丁颖. AlInAs氧化物限制1.3μm低阈值边发射激光器(英文)[J]. 半导体学报(英文版), 2004, 25(6): 620-625.
      Citation:
      刘志宏, 王圩, 王书荣, 赵玲娟, 朱洪亮, 周帆, 王鲁峰, 丁颖. AlInAs氧化物限制1.3μm低阈值边发射激光器(英文)[J]. 半导体学报(英文版), 2004, 25(6): 620-625.
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      • Received Date: 2015-08-19

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