Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots

  • Department of Security and Prevention,Chinese People’s Public Security University,Beijing 102416,China
  • Department of Security and Prevention,Chinese People’s Public Security University,Beijing 102416,China
  • Department of Security and Prevention,Chinese People’s Public Security University,Beijing 102416,China
  • Department of Security and Prevention,Chinese People’s Public Security University,Beijing 102416,China
  • Key Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130033,China
  • Key Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130033,China
  • Key Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130033,China
  • Key Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130033,China

Key words: ZnCdSe QW/CdSe QDsphotoluminescencerecombinationtunneling

Abstract: Coupling structures for a ZnCdSe quantum well and CdSe quantum dots (QDs) with different thickness of barrier layer were fabricated by metal organic chemical vapor deposition (MOCVD).The recombination and tunneling of excitons in the ZnCdSe QW/CdSe QDs structure were investigated using photoluminescence (PL) spectra at 5K.The tunneling process of the exciton from QW to QDs was observed.The excitation light power dependence of PL peak position and PL-integrated intensity were also investigated,respectively.The results reveal that in this structure with thinner barrier layer,the absorption saturation in ZnCdSe quantum well can be restrained.

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