Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

  • Institute of Microelectronics,Peking University,Beijing 100871,China
  • Institute of Microelectronics,Peking University,Beijing 100871,China
  • Institute of Microelectronics,Peking University,Beijing 100871,China
  • Institute of Microelectronics,Peking University,Beijing 100871,China
  • Institute of Microelectronics,Peking University,Beijing 100871,China
  • Institute of Microelectronics,Peking University,Beijing 100871,China

Key words: double-gateSchottky barrierthreshold voltage

Abstract: A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.

    HTML

Relative (20)

Journal of Semiconductors © 2017 All Rights Reserved