A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe

  • Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China
  • School of Information Engineering, Zhengzhou University,Zhengzhou 450052,China
  • Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China

Key words: power amplifiersilicon germaniumBiCMOSheterojunction bipolar transistor

Abstract: A 2GHz power amplifier realized in IBM 5PAe 0.35μm SiGe BiCMOS technology is reported.This amplifier was implemented in a two-stage single-ended structure.All components except choking inductors were integrated on-chip.Full-frequency stability was achieved using serial resistors between the bases of the transistors and matching inductors.The off-chip test proved the stability under all the supplied voltages.At VC=3.5V,VB=6V,the small signal gain was 20.8dB,the input and output reflectance was less than -17 and -16dB,respectively,and the Pout-2dB was about 24dBm.At the output power of 25.1dBm,the PAE was about 21.5%,and the second and third harmonics were less than -45 and -52dBc,respectively.This insures the linearity of the circuits.


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