MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE

  • School of Science,Xi'an Jiaotong University,Xi'an 710049,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
  • School of Science,Xi'an Jiaotong University,Xi'an 710049,China
  • Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
  • School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China

Key words: Mg0.2Zn0.8O filmultraviolet photodetectorresponse time

Abstract: Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures.The films were all annealed in air at 900℃ for 1h.Then interdigital Al electrodes were evaporated on the films using the standard lift-off technique.A Mg0.2Zn0.8O ultraviolet photodetector was obtained,with a fast rise time of 14.3ns and fall time of 6.5μs.

    HTML

Relative (20)

Journal of Semiconductors © 2017 All Rights Reserved