Modeling of High-Voltage LDMOS for PDP Driver ICs

  • National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
  • National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
  • National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
  • National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China

Key words: modelLDMOSsub-circuitPDP driver ICs

Abstract: A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs.The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects,voltage-dependent drift resistance,self-heating effects,and Miller capacitance.In contrast to most physical or sub-circuit models,the proposed model not only provides precise simulated results,but also brings a very fast modeling procedure.Furthermore,the model also can be embedded in a commercial SPICE simulator easily.The simulation results using the presented models agree well with the measured ones and the error is less than 5%.

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