The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots

  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Key words: quantum dotsmulti-peak structureenergy-level structurephotoluminescence

Abstract: Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes are deduced.

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