A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer

  • Department of Electronic & Communications Engineering,Harbin Institute of Technology,Harbin 150001,China
  • Department of Electronic & Communications Engineering,Harbin Institute of Technology,Harbin 150001,China
  • Department of Electronic & Communications Engineering,Harbin Institute of Technology,Harbin 150001,China
  • Department of Electronic & Communications Engineering,Harbin Institute of Technology,Harbin 150001,China
  • Department of Electronic & Communications Engineering,Harbin Institute of Technology,Harbin 150001,China

Key words: RF CMOSpower amplifiertransformerWiMAX

Abstract: We propose a dual band CMOS power amplifier for mobile WiMAX systems.The power amplifier,combined with an active matching transformer,is fully integrated and fabricated in a 0.13μm CMOS process.The transformer operates at dual bands with active matching circuit.The measured result shows that the transformer efficiency of 78.2% and 70.4% at 2.5 and 3.5GHz are realized,respectively,and 26.5 and 24.8dB gain are achieved.The PAE reaches 20% and 28% at 2.5 and 3.5GHz,respectively.The third inter-modulation (IM3) is lower than -30dBc at the 25dBm average power.

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