A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness

  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

Key words: carrier velocitydepletion-layer thicknesscollector transit timeVBIC model

Abstract: The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.

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