Just Accepted

Just Accepted manuscripts are peer-reviewed and accepted for publication. They are posted online prior to technical editing formatting for publication and author proofing.

Optimal design of heterogeneously integrated silicon nitride-lithium niobate modulator
Rui Zhao, Haizhong Weng, Qing Wan
, Available online  

doi: 10.1088/1674-4926/25120032

Heterogeneously integrated lithium niobate (LN) electro-optic modulators have great potential for high-speed applications, but challenges remain in optimizing performance, particularly in terms of modulation efficiency, bandwidth, and the trade-offs. This work presents an optimized design for a silicon-nitride (Si3N4)-loaded modulator on a thin-film lithium niobate (TFLN) platform, consisting of 300 nm-thick LN film and 300 nm-thick Si3N4 optical waveguide. By systematically optimizing the dielectric layer thickness, electrode parameters, and achieving velocity and impedance matching, we demonstrate a modulator with a bandwidth exceeding 200 GHz. Our collaborative optimization scheme highlights the critical role of reducing the silicon oxide box layer thickness for velocity matching. We show that multiple structural configurations can achieve bandwidths greater than 120 GHz with Vπ·L< 4 V·cm, providing feasibility in low-loss design and fabrication. These findings offer valuable design guidelines for high-performance electro-optic modulators suitable for data communications.

Heterogeneously integrated lithium niobate (LN) electro-optic modulators have great potential for high-speed applications, but challenges remain in optimizing performance, particularly in terms of modulation efficiency, bandwidth, and the trade-offs. This work presents an optimized design for a silicon-nitride (Si3N4)-loaded modulator on a thin-film lithium niobate (TFLN) platform, consisting of 300 nm-thick LN film and 300 nm-thick Si3N4 optical waveguide. By systematically optimizing the dielectric layer thickness, electrode parameters, and achieving velocity and impedance matching, we demonstrate a modulator with a bandwidth exceeding 200 GHz. Our collaborative optimization scheme highlights the critical role of reducing the silicon oxide box layer thickness for velocity matching. We show that multiple structural configurations can achieve bandwidths greater than 120 GHz with Vπ·L< 4 V·cm, providing feasibility in low-loss design and fabrication. These findings offer valuable design guidelines for high-performance electro-optic modulators suitable for data communications.
One-dimensional domain walls: A new dimension for ferroelectric nanoelectronics
Zepeng Li, Wenjing Yue, Yang Li
, Available online  

doi: 10.1088/1674-4926/26020017

Crystallization suppression of mixed-halide intermediates for perovskite/Cu(In,Ga)Se2 tandem solar cells with improved efficiency
Manya Li, Linjing Jing, Hairen Tan
, Available online  

doi: 10.1088/1674-4926/26020045

Crystallization-sequence engineering enables organic solar cell modules with efficiencies exceeding 18%
Yunhao Cai, Hui Huang
, Available online  

doi: 10.1088/1674-4926/26020050

Exciplex-enabled fully stretchable OLEDs achieve a record external quantum efficiency of 17%
Meng Wang, Liang Li
, Available online  

doi: 10.1088/1674-4926/26020007

Zigzag domain walls unravel the polarization switching puzzle in wurtzite ferroelectrics
Hang Zang, Zhiming Shi, Xiaojuan Sun, Dabing Li
, Available online  

doi: 10.1088/1674-4926/26020035

A cascadable stereo matching processor with pixel-wise fusion for extended depth sensing
Zhuoyu Chen, Pingcheng Dong, Zhiyong Lai, Wenyue Zhang, Xianglong Wang, Lei Chen, Fengwei An
, Available online  

doi: 10.1088/1674-4926/25120024

Achieving long-range, high-accuracy depth perception under stringent power constraints remains a critical challenge for stereo vision in edge applications. This work presents a cascadable stereo matching processor that overcomes the inherent trade-off between sensing range and computational efficiency. The core innovation is a scalable semi-global matching (SSGM) algorithm which dynamically optimizes the disparity search range for different baselines, ensuring constant on-chip memory usage and a significant reduction in data movement. The architecture further integrates a raw-domain rectification front-end, which performs direct geometric transformation on Bayer-patterned image streams. This approach eliminates the need for external memory access by bypassing conventional ISP pipelines, thereby maximizing throughput and reducing system memory consumption. Parallel processing paths for multiple baselines converge in a pixel-wise fusion module, which synthesizes a unified depth map by selecting the most reliable disparity estimate for each output pixel. The cascadable stereo matching processor achieves speedups of up to 178x and 97x over CPU and EdgeGPU platforms, respectively, in multi-baseline stereo disparity fusion. Implemented in 40-nm CMOS technology, the processor operates at 160 MHz, achieving a processing speed of 80 frames per second with an energy efficiency of 7.9 pJ/pixel and occupying a core area of 6.04 mm2.

Achieving long-range, high-accuracy depth perception under stringent power constraints remains a critical challenge for stereo vision in edge applications. This work presents a cascadable stereo matching processor that overcomes the inherent trade-off between sensing range and computational efficiency. The core innovation is a scalable semi-global matching (SSGM) algorithm which dynamically optimizes the disparity search range for different baselines, ensuring constant on-chip memory usage and a significant reduction in data movement. The architecture further integrates a raw-domain rectification front-end, which performs direct geometric transformation on Bayer-patterned image streams. This approach eliminates the need for external memory access by bypassing conventional ISP pipelines, thereby maximizing throughput and reducing system memory consumption. Parallel processing paths for multiple baselines converge in a pixel-wise fusion module, which synthesizes a unified depth map by selecting the most reliable disparity estimate for each output pixel. The cascadable stereo matching processor achieves speedups of up to 178x and 97x over CPU and EdgeGPU platforms, respectively, in multi-baseline stereo disparity fusion. Implemented in 40-nm CMOS technology, the processor operates at 160 MHz, achieving a processing speed of 80 frames per second with an energy efficiency of 7.9 pJ/pixel and occupying a core area of 6.04 mm2.
Pathways of advanced 3D integration based on two-dimensional materials
Qian He, Hailiang Wang, Yishu Zhang, Bin Yu
, Available online  

doi: 10.1088/1674-4926/26020039

Infrared Photodetectors based on III−V Colloidal Quantum Dots
Yang Liu, Zeke Liu, Wanli Ma
, Available online  

doi: 10.1088/1674-4926/26020012

Material platforms for solid-state single-photon sources: wide bandgap semiconductors
Junhua Meng, Yiming Shi, Xingwang Zhang
, Available online  

doi: 10.1088/1674-4926/26020003

Re-benchmarking polarization in wurtzite nitride semiconductors
Ping Wang, Haotian Ye, Rui Wang, Tao Wang, Fang Liu, Zhaoying Chen, Ding Wang, Bo Shen, Xinqiang Wang
, Available online  

doi: 10.1088/1674-4926/26020013

Controllable synthesis of magnetic CoO nanosheets by chemical vapor deposition
Zidan Peng, Zengfu Li, Junkun Zhou, Liang Li, Bowen Yao, Jinchen Zan, Yechen Wang, Hongmei Zhang, Gang Peng, Guang Wang
, Available online  

doi: 10.1088/1674-4926/25120039

Two-dimensional (2D) magnetic materials have attracted significant attention owing to their tunable magnetic properties and prospective applications in next-generation spintronic devices. However, their practical utilization is often limited by poor air stability. 2D magnetic metal oxides, which generally exhibit better stability under ambient conditions, represent a promising alternative. In this work, high-quality CoO nanosheets were successfully synthesized via chemical vapor deposition. Structural characterization confirms a well-defined triangular morphology and single-crystalline nature, with the thinnest nanosheets reaching approximately 10.1 nm in thickness. Magnetic measurements reveal significant magnetic anisotropy with an in-plane easy magnetization axis and a transition temperature of approximately 159 K. Our study provides a feasible approach for the controllable synthesis of air-stable 2D magnetic semiconductors, thereby laying a foundation for their potential application in low-power spintronic devices.

Two-dimensional (2D) magnetic materials have attracted significant attention owing to their tunable magnetic properties and prospective applications in next-generation spintronic devices. However, their practical utilization is often limited by poor air stability. 2D magnetic metal oxides, which generally exhibit better stability under ambient conditions, represent a promising alternative. In this work, high-quality CoO nanosheets were successfully synthesized via chemical vapor deposition. Structural characterization confirms a well-defined triangular morphology and single-crystalline nature, with the thinnest nanosheets reaching approximately 10.1 nm in thickness. Magnetic measurements reveal significant magnetic anisotropy with an in-plane easy magnetization axis and a transition temperature of approximately 159 K. Our study provides a feasible approach for the controllable synthesis of air-stable 2D magnetic semiconductors, thereby laying a foundation for their potential application in low-power spintronic devices.
MPNet: A modular deep learning process TCAD surrogate modeling framework
Qipei Zhang, Pengwei Liu, Wenzhang Fang, Dong Ni, Yuting Kong
, Available online  

doi: 10.1088/1674-4926/25100005

The computational cost of TCAD simulations is becoming prohibitively high with the complexity of advanced process technologies, making simulation acceleration a critical research priority. While end-to-end surrogate models mapping process recipes to device structures and characteristics offer a promising alternative, their application is often limited by poor generalizability and explainability. In this work, we present MPNet, a modular deep learning surrogate modeling framework for process TCAD. MPNet comprises distinct surrogate models for individual process modules, which are assembled into an integrated framework. These modular models employ a novel UNet-attention feature evolution method to capture the complex evolutions of device geometry and doping profiles. Each module can be trained separately on its individual process, after which the modules are cascaded and jointly fine-tuned to minimize error accumulation throughout the cascade. The efficacy of the proposed MPNet framework is demonstrated through a MOSFET integrated process TCAD case study. Results show that MPNet achieves a computational speedup of over 103 times compared to conventional TCAD, while maintaining predictive fidelity exceeding 98%. Finally, to illustrated the application of the proposed framework, MPNet is coupled with a PSO algorithm, showcasing its utility for fast process optimization to meet specific process targets.

The computational cost of TCAD simulations is becoming prohibitively high with the complexity of advanced process technologies, making simulation acceleration a critical research priority. While end-to-end surrogate models mapping process recipes to device structures and characteristics offer a promising alternative, their application is often limited by poor generalizability and explainability. In this work, we present MPNet, a modular deep learning surrogate modeling framework for process TCAD. MPNet comprises distinct surrogate models for individual process modules, which are assembled into an integrated framework. These modular models employ a novel UNet-attention feature evolution method to capture the complex evolutions of device geometry and doping profiles. Each module can be trained separately on its individual process, after which the modules are cascaded and jointly fine-tuned to minimize error accumulation throughout the cascade. The efficacy of the proposed MPNet framework is demonstrated through a MOSFET integrated process TCAD case study. Results show that MPNet achieves a computational speedup of over 103 times compared to conventional TCAD, while maintaining predictive fidelity exceeding 98%. Finally, to illustrated the application of the proposed framework, MPNet is coupled with a PSO algorithm, showcasing its utility for fast process optimization to meet specific process targets.
Three-panchromatic organic self-adaptive transistors for in-pixel color correction
Yuan Tan, Wei Deng, Xiujuan Zhang, Jiansheng Jie
, Available online  

doi: 10.1088/1674-4926/26020023

Ultrathin van der Waals ferroelectric oxides for scalable low-power memory
Xiaokun Qin, Bowen Zhong, Zheng Lou, Lili Wang
, Available online  

doi: 10.1088/1674-4926/26020015