Along with NOR flash cell scaling down, dielectric burnout has gradually become one of the most important factors which affects product reliability, especially for high dropout voltage films. In this study, we demonstrate a reliability-enhanced NOR flash cell in 50 nm node technology through structural optimization of floating gate (FG) dimensions and active area profile. By synergistically increasing FG thickness, reducing FG width, and tuning cell-open depth, the control gate-to-active area corner distance expands by 22%, suppressing peak electric fields by 29% vertically and 18% horizontally. This structural innovation achieves: (1) 100× reduction in early-cycle burnout failures, (2) 7.38× Time Dependent Dielectric Breakdown lifetime improvement, while maintaining data retention and accelerating programming/erasing speeds by 15.4%/7.3%. The enhanced reliability enables 97.5% reduction in Fowler-Nordheim stress time during Characterization Program testing, providing a cost-effective solution for automotive-grade flash memories.
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In this paper, a planar junction mid-wavelength infrared (MWIR) photodetector based on an InAs/GaSb type-II superlattices (T2SLs) is reported. The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy (MBE), followed with a ZnS layer grown by the chemical vapor deposition (CVD). The P-type contact layer was constructed by thermal diffusion in the undoped superlattices. The Zinc atom was successfully realised in to the superlattice and a PπMN T2SL structure was constructed. Furthermore, the effects of different diffusion temperatures on the dark current performance of the devices were researched. The 50% cut-off wavelength of the photodetector is 5.26 μm at 77K with 0V bias. The minimum dark current density is 8.67 × 10−5 A/cm2 and the maximum quantum efficiency of 42.5%, and the maximum detectivity reaches 3.90 × 1010 cm·Hz1/2/W at 77 K. The 640 × 512 focal plane arrays (FPA) based on the planner junction were fabricated afterwards. The FPA achieves a noise equivalent temperature difference (NETD) of 539 mK.
In vertical channel transistors (VCTs), source/drain ion implantation (I/I) represents a significant technical challenge due to inherent three-dimensional structural constraints, which induce complications such as difficulties in dummy gate formation and shadowing effects of I/I. This article systematically investigates the impact of different implantation conditions on the performance of VCTs with and without dummy gates through TCAD simulation. It reveals the significant role of the lightly doped regions (LDRs) naturally formed due to ion implantation in source/drain of VCTs. Furthermore, it was found that VCT without dummy gates can achieve an approximately 27% increase in on-state current (Ion) under the same implantation conditions, and can greatly simplify the process flow and reduce costs. Finally, N-type and P-type VCTs were successfully fabricated using this implantation method.
InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si (111) substrate. Also, heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry. In the low-temperature photoluminescence spectra of the grown structures, spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase. It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires. The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands. The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a polytypic hexagonal structure, having a concentration of nitrogen atoms of up to 0.7%. Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires, which makes it possible to detect photoluminescence emission at room temperature. Thus, by changing the composition and morphology of nanowires, it is possible to control their electronic structure, which allows varying the operating range of detectors and mid-IR radiation sources based on them.
The random nanofiber distribution in traditional electrospun membranes restricts the pressure sensing sensitivity and measurement range of electronic skin. Moreover, current multimodal sensing suffers from issues like overlapping signal outputs and slow response. Herein, a novel electrospinning method is proposed to prepare double-coupled microstructured nanofibrous membranes. Through the effect of high voltage electrostatic field in the electrospinning, the positively charged nanofibers are preferentially attached to the negatively charged foam surface, forming the ordered two-dimensional honeycomb porous nanofibrous membrane with three-dimensional spinous microstructure. Compared with the conventional random porous nanofibrous membrane, the bionic two-dimensional honeycomb and three-dimensional spinous dual-coupled microstructures in the ordered porous nanofibrous membrane endows the electronic skin with significantly improved mechanical properties (maximum tensile strain increased by 77% and fatigue resistance increased by 35%), air permeability (water vapor transmission rate increased by 16%) and sensing properties (pressure sensitivity increased by 276% and detection range increased by 137%). Furthermore, the electronic skin was constructed by means of a conformal composite ionic liquid functionalized nanofibrous membrane, and the real-time and interference-free dual-signal monitoring of pressure and temperature (maximum temperature coefficient of resistance: −0.918 °C−1) was realized.
To address the escalating demand for high-mobility transparent and conductive oxide (TCO) films in heterojunction solar cells, multiple components doped In2O3 targets were proposed. The In2O3 targets incorporating 1 wt.% CeO2, Ta2O5 and TiO2 were sintered under different sintering temperatures and times. All the targets show the cubic bixbyite phase of In2O3. The microstructure illustrates densely packed fine grains and uniform elemental distribution. Notably, increasing the sintering temperature and holding time contributes to effective pore elimination within the targets. A relative density of greater than 99.5% is obtained for the targets sintered at 1500 °C for 4 and 6 h, and the corresponding optimum resistivity decreases from 1.068×10−³ Ω·cm to 9.73×10−4 Ω·cm. These results provide the experimental basis of fabricating In2O3-based targets for depositing high mobility TCO films by magnetron sputtering.
