Chin. J. Semicond. > 1994, Volume 15 > Issue 7 > 501-504
|

CONTENTS

高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质

江若琏，刘建林，李海峰，郑厚植

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2906 Times PDF downloads: 1024 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 July 1994

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1994  >  15(7): 501-504
      江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质[J]. 半导体学报(英文版), 1994, 15(7): 501-504.
      Citation:
      江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质[J]. 半导体学报(英文版), 1994, 15(7): 501-504.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return