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Zhongxin Zheng, Jiandong Sun, Yu Zhou, Zhipeng Zhang, Hua Qin.
Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure.
J. Semicond.,
2015, 36(10): 104002.
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Zhou Qisheng, Cao Juncheng, Qi Ming, Lei Xiaolin.
Phonon-induced magnetoresistance oscillations in a high-mobility quantum well.
J. Semicond.,
2010, 31(9): 092001.
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Xu Wen.
Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction.
J. Semicond.,
2006, 27(2): 204.
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Zhang Li.
Polar Quasi-Confined Optical Phonon Modes in Wurtzite Quasi-One-Dimensional GaN/AlxGa1-xN Quantum Well Wires.
J. Semicond.,
2006, 27(10): 1717.
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Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian.
Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs.
J. Semicond.,
2005, 26(12): 2396.
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Zhao Jianzhi, Lin Zhaojun, Lü Yuanjie, Corrigan Timothy D, Meng Lingguo, Zhang Yu, Wang Zhanguo, Chen Hong.
Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures.
J. Semicond.,
2010, 31(8): 084007.
doi: 10.1088/1674-4926/31/8/084007
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Suranjana Banerjee, Monojit Mitra.
Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system.
J. Semicond.,
2015, 36(6): 064002.
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Zhang Min, Ban Shiliang.
Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field.
J. Semicond.,
2010, 31(5): 052002.
doi: 10.1088/1674-4926/31/5/052002
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Zhang Bin, Yan Zuwei, Zhang Min.
Bound polaron in a strained wurtzite GaN/AlxGa1-xN cylindrical quantum dot.
J. Semicond.,
2011, 32(6): 062003.
doi: 10.1088/1674-4926/32/6/062003
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Lu Jianduo, Xu Bin.
Giant magnetoresistance in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes.
J. Semicond.,
2012, 33(7): 074007.
doi: 10.1088/1674-4926/33/7/074007
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Ha Sihua, Ban Shiliang, Zhu Jun.
Binding energies of shallow impurities in asymmetric strained wurtzite AlxGa1-xN/GaN/AlyGa1-yN quantum wells.
J. Semicond.,
2011, 32(4): 042001.
doi: 10.1088/1674-4926/32/4/042001
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Hanming Zhou, Xiao Lin, Hongwei Guo, Shisheng Lin, Yiwei Sun, Yang Xu.
Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions.
J. Semicond.,
2017, 38(3): 033002.
doi: 10.1088/1674-4926/38/3/033002
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S. Dlimi, A. El kaaouachi, L. Limouny, B. A. Hammou.
A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures.
J. Semicond.,
2020, 41(12): -1.
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Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi, Kang Junyong.
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures.
J. Semicond.,
2011, 32(4): 043006.
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Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, Zhang Guoyi.
Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells.
J. Semicond.,
2006, 27(3): 403.
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Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping.
Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT.
J. Semicond.,
2006, 27(2): 298.
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Xin Cong, Miaoling Lin, Ping-Heng Tan.
Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure.
J. Semicond.,
2019, 40(9): 091001.
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Xu Fujun, Shen Bo, Wang Maojun, Xu jian, Miao Zhenlin, Yang Zhijian, Qin Zhixin, Zhang Guoyi, Lin Bing, Bai Shulin.
Elastic-Plastic Mechanical Properties of AlxGa1-xN Thin Films with High Al Composition.
J. Semicond.,
2007, 28(10): 1551.
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Bi Yang, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Yang Cuibai, Peng Enchao, Lin Defeng, Feng Chun, Jiang Lijuan.
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure.
J. Semicond.,
2011, 32(8): 083003.
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Aritra Acharyya.
Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration.
J. Semicond.,
2018, 39(7): 072002.
doi: 10.1088/1674-4926/39/7/072002
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