Chin. J. Semicond. > Volume 27 > Issue 2 > Article Number: 235

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning , Shen Bo , Wang Maojun , Yang Zhijian , Xu Ke , Zhang Guoyi , Gui Yongsheng , Zhu Bo , Guo Shaoling and Chu Junhao

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Abstract: Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields.It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Key words: AlxGa1-xN/GaN heterostructuretwo-dimensional electron gastransport property


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Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 2006

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