Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning; Shen Bo; Wang Maojun; Yang Zhijian; Xu Ke; Zhang Guoyi; Gui Yongsheng; Zhu Bo; Guo Shaoling; Chu Junhao

Abstract: Magnetotransport properties of two-dimensional electron gases (2DEG) in Al_xGa_1-xN/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields.It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Key words: Al_xGa_1-xN/GaN heterostructure, two-dimensional electron gas, transport property

[1]	Zhongxin Zheng, Jiandong Sun, Yu Zhou, Zhipeng Zhang, Hua Qin. Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure. J. Semicond., 2015, 36(10): 104002. doi: 10.1088/1674-4926/36/10/104002
[2]	Zhou Qisheng, Cao Juncheng, Qi Ming, Lei Xiaolin. Phonon-induced magnetoresistance oscillations in a high-mobility quantum well. J. Semicond., 2010, 31(9): 092001. doi: 10.1088/1674-4926/31/9/092001
[3]	Xu Wen. Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction. J. Semicond., 2006, 27(2): 204.
[4]	Zhang Li. Polar Quasi-Confined Optical Phonon Modes in Wurtzite Quasi-One-Dimensional GaN/AlxGa1-xN Quantum Well Wires. J. Semicond., 2006, 27(10): 1717.
[5]	Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs. J. Semicond., 2005, 26(12): 2396.
[6]	Zhao Jianzhi, Lin Zhaojun, Lü Yuanjie, Corrigan Timothy D, Meng Lingguo, Zhang Yu, Wang Zhanguo, Chen Hong. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al_0.3Ga_0.7N/GaN heterostructures. J. Semicond., 2010, 31(8): 084007. doi: 10.1088/1674-4926/31/8/084007
[7]	Suranjana Banerjee, Monojit Mitra. Heterojunction DDR THz IMPATT diodes based on Al_xGa_1-xN/GaN material system. J. Semicond., 2015, 36(6): 064002. doi: 10.1088/1674-4926/36/6/064002
[8]	Zhang Min, Ban Shiliang. Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field. J. Semicond., 2010, 31(5): 052002. doi: 10.1088/1674-4926/31/5/052002
[9]	Zhang Bin, Yan Zuwei, Zhang Min. Bound polaron in a strained wurtzite GaN/Al_xGa_1-xN cylindrical quantum dot. J. Semicond., 2011, 32(6): 062003. doi: 10.1088/1674-4926/32/6/062003
[10]	Lu Jianduo, Xu Bin. Giant magnetoresistance in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes. J. Semicond., 2012, 33(7): 074007. doi: 10.1088/1674-4926/33/7/074007
[11]	Ha Sihua, Ban Shiliang, Zhu Jun. Binding energies of shallow impurities in asymmetric strained wurtzite Al_xGa_1-xN/GaN/Al_yGa_1-yN quantum wells. J. Semicond., 2011, 32(4): 042001. doi: 10.1088/1674-4926/32/4/042001
[12]	Hanming Zhou, Xiao Lin, Hongwei Guo, Shisheng Lin, Yiwei Sun, Yang Xu. Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions. J. Semicond., 2017, 38(3): 033002. doi: 10.1088/1674-4926/38/3/033002
[13]	Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT. J. Semicond., 2006, 27(2): 298.
[14]	Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi, Kang Junyong. X-ray reflectivity and atomic force microscopy studies of MOCVD grown Al_xGa_1-xN/GaN superlattice structures. J. Semicond., 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006
[15]	Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, Zhang Guoyi. Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells. J. Semicond., 2006, 27(3): 403.
[16]	Xin Cong, Miaoling Lin, Ping-Heng Tan. Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure. J. Semicond., 2019, 40(9): 091001. doi: 10.1088/1674-4926/40/9/091001
[17]	Xu Fujun, Shen Bo, Wang Maojun, Xu jian, Miao Zhenlin, Yang Zhijian, Qin Zhixin, Zhang Guoyi, Lin Bing, Bai Shulin. Elastic-Plastic Mechanical Properties of AlxGa1-xN Thin Films with High Al Composition. J. Semicond., 2007, 28(10): 1551.
[18]	Bi Yang, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Yang Cuibai, Peng Enchao, Lin Defeng, Feng Chun, Jiang Lijuan. Simulation of electrical properties of In_xAl_1-xN/AlN/GaN high electron mobility transistor structure. J. Semicond., 2011, 32(8): 083003. doi: 10.1088/1674-4926/32/8/083003
[19]	Aritra Acharyya. Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration. J. Semicond., 2018, 39(7): 072002. doi: 10.1088/1674-4926/39/7/072002
[20]	Yun Kang, Sheng Wang, Xianli Li. Electron energy states in a two-dimensional GaAs quantum ring with hydrogenic donor impurity in the presence of magnetic field. J. Semicond., 2015, 36(3): 032003. doi: 10.1088/1674-4926/36/3/032003