J. Semicond. > Volume 30 > Issue 10 > Article Number: 102001

Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films

Ding Wuchang , Zuo Yuhua , Zhang Yun , Guo Jianchuan , Cheng Buwen , Yu Jinzhong , Wang Qiming , Guo Hengqun , Lü Peng and Shen Jiwei

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Abstract: Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er3+ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.

Key words: photoluminescence silicon nitride Er doping

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Ding W C, Zuo Y H, Zhang Y, Guo J C, Cheng B W, Yu J Z, Wang Q M, Guo H Q, Lü P, Shen J W. Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J]. J. Semicond., 2009, 30(10): 102001. doi: 10.1088/1674-4926/30/10/102001.

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History

Manuscript received: 18 August 2015 Manuscript revised: 13 May 2009 Online: Published: 01 October 2009

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