J. Semicond. > Volume 30 > Issue 11 > Article Number: 113004

Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

Li Zhiming , Xu Shengrui , Zhang Jincheng , Chang Yongming , Ni Jingyu , Zhou Xiaowei and Hao Yue

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Abstract: The temperature field in the vertical metalorganic chemical vapor deposition (MOCVD) reactor chamber used for the growth of GaN materials is studied using the finite element analysis method (FEM). The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.

Key words: MOCVD ?nite element temperature suspector

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Li Z M, Xu S R, Zhang J C, Chang Y M, Ni J Y, Zhou X W, Hao Y. Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating[J]. J. Semicond., 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004.

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History

Manuscript received: 18 August 2015 Manuscript revised: 14 June 2009 Online: Published: 01 November 2009

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