J. Semicond. > Volume 30 > Issue 2 > Article Number: 024004

Accurate and fast table look-up models for leakage current analysis in 65 nm CMOS technology

Xue Jiying , Li Tao and Yu Zhiping

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Abstract: Novel physical models for leakage current analysis in 65 nm technology are proposed. Taking into consideration the process variations and emerging effects in nano-scaled technology, the presented models are capable of accurately estimating the subthreshold leakage current and junction tunneling leakage current in 65??nm technology. Based on the physical models, new table look-up models are developed and first applied to leakage current analysis in pursuit of higher simulation speed. Simulation results show that the novel physical models are in excellent agreement with the data measured from the foundry in the 65 nm process, and the proposed table look-up models can provide great computational efficiency by using suitable interpolation techniques. Compared with the traditional physical-based models, the table look-up models can achieve 2.5X speedup on average on a variety of industry circuits.

Key words: leakage current 65?nm technology table look-up model interpolation


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Xue J Y, Li T, Yu Z P. Accurate and fast table look-up models for leakage current analysis in 65 nm CMOS technology[J]. J. Semicond., 2009, 30(2): 024004. doi: 10.1088/1674-4926/30/2/024004.

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Manuscript received: 18 August 2015 Manuscript revised: 22 September 2008 Online: Published: 01 February 2009

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