J. Semicond. > Volume 30 > Issue 5 > Article Number: 055008

A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

Peng Yanjun , Song Jiayou , Wang Zhigong and Tsang K F

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Abstract: A 2.4-GHz SiGe HBT power amplifier (PA) with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology, BiCMOS5PAe. The bias circuit switches the quiescent current to make the PA operate in a high or low power mode. Under a single supply voltage of +3.5 V, the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20 dBm, respectively, with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode. The die size is only 1.32×1.37 mm2.

Key words: power amplifier SiGe HBT bias circuit


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Peng Y J, Song J Y, Wang Z G, Tsang K F. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit[J]. J. Semicond., 2009, 30(5): 055008. doi: 10.1088/1674-4926/30/5/055008.

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Manuscript received: 18 August 2015 Manuscript revised: 09 November 2008 Online: Published: 01 May 2009

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