J. Semicond. > Volume 30 > Issue 8 > Article Number: 084005

Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization

Fu Jun

+ Author Affilications + Find other works by these authors

PDF

Abstract: High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base–collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base–collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data” with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, theextraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base–collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S -parameters as a function of frequency.

Key words: SiGe; heterojunction bipolar transistors; small-signal; model; parameter extraction

[1]

Le Yu, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, Xiaohua Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT. J. Semicond., 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003

[2]

Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao. Transport Current Model of SiGe HBT. J. Semicond., 2006, 27(6): 1059.

[3]

Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong, Wang Qiming. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications. J. Semicond., 2007, 28(4): 496.

[4]

Liu Dan, Chen Xiaojuan, Liu Xinyu, Wu Dexin. A 22-Element Small-Signal Model of GaN HEMT Devices. J. Semicond., 2007, 28(9): 1438.

[5]

Yang Hongbin, Fan Yongliang, Zhang Xiangjiu. Strain and Annealing Effect of SiGe/Si Heterostructure in Limited Area Grown by MBE. J. Semicond., 2007, 28(8): 1226.

[6]

Zeng Yugang, Han Genquan, Yu Jinzhong. Growth of SiGe by D-UHV/CVD at Low Temperature. J. Semicond., 2008, 29(10): 1889.

[7]

Miao Ang, Li Yiqun, Wu Qiang, Cui Hailin, Huang Yongqing, Huang Hui, Ren Xiaomin. Small-Signal Equivalent Circuit Modeling of a Photodetector Chip. J. Semicond., 2007, 28(12): 1878.

[8]

Cheng Buwen, Yao Fei, Xue Chunlai, Zhang Jianguo, Li Chuanbo, Mao Rongwei, Zuo Yuhua, Luo Liping, Wang Qiming. Strain Compensation in SiGe by Boron Doping. J. Semicond., 2005, 26(13): 39.

[9]

Xu Yang, Wang Fei, Xu Jun, Liu Zhihong, Qian Peixin. Two Kinds of Patterned SiGe Epitaxial Growth Technologies. J. Semicond., 2006, 27(13): 389.

[10]

Jin Dongyue, Zhang Wanrong, Shen Pei, Xie Hongyun, Wang Yang. Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing. J. Semicond., 2007, 28(10): 1527.

[11]

Yang Hongbin, Fan Yongliang. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer. J. Semicond., 2006, 27(13): 144.

[12]

Fan Bo, Dai Yujie, Zhang Xiaoxing, Lü Yingjie. Modeling and analysis of power extraction circuits for passive UHF RFID applications. J. Semicond., 2009, 30(1): 015011. doi: 10.1088/1674-4926/30/1/015011

[13]

Ren Zheng, Hu Shaojian, Jiang Bin, Wang Yong, Zhao Yuhang. Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT. J. Semicond., 2008, 29(5): 960.

[14]

Liu Linsheng. Improved Nonlinear Model of HEMTs with Independent Transconductance Tail-Off Fitting. J. Semicond., 2011, 32(2): 024004. doi: 10.1088/1674-4926/32/2/024004

[15]

Ma Desheng, Shi Yin, Dai Fa Foster. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions. J. Semicond., 2006, 27(6): 970.

[16]

Gu Ming, Shi Yin, Dai F F. A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions. J. Semicond., 2006, 27(7): 1159.

[17]

Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm. J. Semicond., 2006, 27(5): 796.

[18]

Xue Chunlai, Cheng Buwen, Yao Fei, Wang Qiming. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications. J. Semicond., 2006, 27(1): 9.

[19]

Zhang Jing, Xu Wanjing, Tan Kaizhou, Li Rongqiang, Li Kaicheng, Liu Daoguang, Liu Luncai. A Novel Strained Si Channel Heterojunction pMOSFET. J. Semicond., 2006, 27(13): 235.

[20]

Lu Jing, Wang Yan, Ma Long, Yu Zhiping. A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs. J. Semicond., 2007, 28(4): 567.

Search

Advanced Search >>

GET CITATION

Fu J. Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization[J]. J. Semicond., 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005.

Export: BibTex EndNote

Article Metrics

Article views: 1874 Times PDF downloads: 2163 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: 16 March 2009 Online: Published: 01 August 2009

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误