J. Semicond. > Volume 30 > Issue 9 > Article Number: 094004

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Liu Wanglai , Xu Bo , Liang Ping , Hu Ying , Sun Hong , Lu Xueqin and Wang Zhanguo

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Abstract: Abstract: Quantum-dot laser diodes (QD-LDs) with a Fabry–Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design. A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6–8 nm, which is approximately equal to the homogeneous broadening of quantum dots.

Key words: quantum dot

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Liu W L, Xu B, Liang P, Hu Y, Sun H, Lu X Q, Wang Z G. Influence of a tilted cavity on quantum-dot optoelectronic active devices[J]. J. Semicond., 2009, 30(9): 094004. doi: 10.1088/1674-4926/30/9/094004.

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History

Manuscript received: 18 August 2015 Manuscript revised: 30 April 2009 Online: Published: 01 September 2009

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