J. Semicond. > Volume 31 > Issue 10 > Article Number: 103003

Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell

Deng Qingwen , Wang Xiaoliang , Xiao Hongling , Ma Zeyu , Zhang Xiaobin , Hou Qifeng , Li Jinmin and Wang Zhanguo

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Abstract: A solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure (AMPS). The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer, intrinsic layer, n-type layer, and doping density. Results show that it is available and preferable in theory to employ a-SiC:H as a window layer in p-a-SiC:H/i-a-Si:H/n-μc-Si solar cells, and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells.

Key words: solar cellsimulationefficiencyAMPS


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Deng Q W, Wang X L, Xiao H L, Ma Z Y, Zhang X B, Hou Q F, Li J M, Wang Z G. Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell[J]. J. Semicond., 2010, 31(10): 103003. doi: 10.1088/1674-4926/31/10/103003.

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Manuscript received: 18 August 2015 Manuscript revised: 24 May 2010 Online: Published: 01 October 2010

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