J. Semicond. > Volume 31 > Issue 11 > Article Number: 114009

Diode parameter extraction by a linear cofactor difference operation method

Ma Chenyue , Zhang Chenfei , Wang Hao , He Jin , Lin Xinnan and Mansun Chan

+ Author Affilications + Find other works by these authors


Abstract: The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for general diodes, is presented. With the developed LCDO method, the extreme spectral characteristic of the diode voltage--current curves is revealed, and its extreme positions are related to the diode characteristic parameters directly. The method is applied to diodes with different sizes and temperatures, and the related characteristic parameters, such as reverse saturation current, series resistance and non-ideality factor, are extracted directly. The extraction result shows good agreement with the experimental data.

Key words: LCDO, diode, parameter extraction, ideality factor, series resistance


Zhang Shuang, Guo Shuxu, Guo Xin, Cao Junsheng, Gao Fengli, Shan Jiangdong, Ren Ruizhi. Extrinsic Ideality Factor of Laser Array. J. Semicond., 2007, 28(5): 768.


Zhang Chenfei, Ma Chenyue, Guo Xinjie, Zhang Xiufang, He Jin, Wang Guozeng, Yang Zhang, Liu Zhiwei. Forward gated-diode method for parameter extraction of MOSFETs. J. Semicond., 2011, 32(2): 024001. doi: 10.1088/1674-4926/32/2/024001


Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz. J. Semicond., 2008, 29(4): 737.


Guo Weilian, Song Ruiliang, Wang Wei, Yu Xin, Niu Pingjuan, Mao Luhong, Zhang Shilin, Liang Huilai. A New Method for Measuring Series Resistance of RTDs. J. Semicond., 2008, 29(5): 950.


M. A. Yeganeh, S. H. Rahmatollahpur. Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes. J. Semicond., 2010, 31(7): 074001. doi: 10.1088/1674-4926/31/7/074001


Wang Xinhua, Zhao Miao, Liu Xinyu, Zheng Yingkui, Wei Ke. A revised approach to Schottky parameter extraction for GaN HEMT. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005


Bu Jianhui, Bi Jinshun, Xi Linmao, Han Zhengsheng. Deep submicron PDSOI thermal resistance extraction. J. Semicond., 2010, 31(9): 094001. doi: 10.1088/1674-4926/31/9/094001


Le Yu, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, Xiaohua Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT. J. Semicond., 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003


Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm. J. Semicond., 2006, 27(5): 796.


Lu Lei, Zhou Feng, Tang Zhangwen, Min Hao, Wang Junyu. Equivalent Model and Parameter Extraction of Center-Tapped Differential Inductors. J. Semicond., 2006, 27(12): 2150.


Liu Jun, Sun Lingling. Parameter Extraction of a III-V Compound HBT Model. J. Semicond., 2006, 27(5): 874.


Fu Jun. Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization. J. Semicond., 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005


K. Chakraborty, S. Chakraborty, N. B. Manik. Effect of single walled carbon nanotubes on series resistance of Rose Bengal and Methyl Red dye-based organic photovoltaic device. J. Semicond., 2018, 39(9): 094001. doi: 10.1088/1674-4926/39/9/094001


Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks. J. Semicond., 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005


Jun Luo, Lei Zhang, Yan Wang. Modeling and parameter extraction of CMOS on-chip coplanar waveguides up to 67 GHz for mm-wave applications. J. Semicond., 2013, 34(12): 125008. doi: 10.1088/1674-4926/34/12/125008


A. Avila Garcia, L. Ortega Reyes. Analysis and parameter extraction of memristive structures based on Strukov’s non-linear model. J. Semicond., 2018, 39(12): 124009. doi: 10.1088/1674-4926/39/12/124009


Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Sun Ming. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs. J. Semicond., 2008, 29(3): 458.


Gao Wei, Yu Zhiping. Parameter Extraction for 2-π Equivalent Circuit Modelof RF CMOS Spiral Inductors. J. Semicond., 2006, 27(4): 667.


Jiaqiang Xie, Li Ma, Yong Gao. Asymmetric anode and cathode extraction structure fast recovery diode. J. Semicond., 2018, 39(5): 054005. doi: 10.1088/1674-4926/39/5/054005


Wang Huan, Wang Zhigong, Xu Jian, Luo Yin, Miao Peng, Yang Siyong, Li Wei. A fast automatic power control circuit for a small form-factor pluggable laser diode drive. J. Semicond., 2010, 31(6): 065014. doi: 10.1088/1674-4926/31/6/065014


Advanced Search >>


Ma C Y, Zhang C F, Wang H, He J, Lin X N, Man S C. Diode parameter extraction by a linear cofactor difference operation method[J]. J. Semicond., 2010, 31(11): 114009. doi: 10.1088/1674-4926/31/11/114009.

Export: BibTex EndNote

Article Metrics

Article views: 1435 Times PDF downloads: 3152 Times Cited by: 0 Times


Manuscript received: 18 August 2015 Manuscript revised: 26 May 2010 Online: Published: 01 November 2010

Email This Article

User name: