J. Semicond. > Volume 31 > Issue 2 > Article Number: 024001

A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

Wang Dongfang , Chen Xiaojuan and Liu Xinyu

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Abstract: This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz. Under VDS = 30 V, CW operating conditions at 14 GHz, the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%. Under pulse operating conditions, the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W. The power density reaches 3.4 W/mm.

Key words: AlGaN/GaN HEMT Ku band power


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Wang D F, Chen X J, Liu X Y. A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate[J]. J. Semicond., 2010, 31(2): 024001. doi: 10.1088/1674-4926/31/2/024001.

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Manuscript received: 18 August 2015 Manuscript revised: 04 September 2009 Online: Published: 01 February 2010

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